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Variation of transfer curves of a-IGZO TFTs as a function of annealing temperature in dry O2. (a) Transfer curves and (b) TFT parameters.
TDS spectrum at m/z ratio of 18 (H2O) for a-IGZO films. (a) Unannealed a-IGZO film deposited at = 3%, and (b) a-IGZO films simply annealed in a dry O2 at 500 °C (Dry 500 °C) and further annealed in a wet O2 at 400 °C (“Dry 500 °C + Wet 400 °C”).
Variation of transfer curves of a-IGZO TFTs subjected to hydrogen re-doping treatments after annealing in dry O2 at 500 °C. (a) Transfer curves of three hydrogen re-doped TFTs and (b)parameters of the “Dry-500 °C + Wet-400 °C” TFT.
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