1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors
Rent:
Rent this article for
USD
10.1063/1.4832076
/content/aip/journal/apl/103/20/10.1063/1.4832076
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/20/10.1063/1.4832076
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Variation of transfer curves of a-IGZO TFTs as a function of annealing temperature in dry O. (a) Transfer curves and (b) TFT parameters.

Image of FIG. 2.
FIG. 2.

TDS spectrum at / ratio of 18 (HO) for a-IGZO films. (a) Unannealed a-IGZO film deposited at  = 3%, and (b) a-IGZO films simply annealed in a dry O at 500 °C (Dry 500 °C) and further annealed in a wet O at 400 °C (“Dry 500 °C + Wet 400 °C”).

Image of FIG. 3.
FIG. 3.

Variation of transfer curves of a-IGZO TFTs subjected to hydrogen re-doping treatments after annealing in dry O at 500 °C. (a) Transfer curves of three hydrogen re-doped TFTs and (b)parameters of the “Dry-500 °C + Wet-400 °C” TFT.

Loading

Article metrics loading...

/content/aip/journal/apl/103/20/10.1063/1.4832076
2013-11-15
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/20/10.1063/1.4832076
10.1063/1.4832076
SEARCH_EXPAND_ITEM