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(a) (001) and (b) (111) oriented III-V semiconductor wafer, showing electric field co-ordinates , and Ez aligned with the crystal axes. For (111) orientation, each field component has components along all three of the main crystal axes. (c) SEM of the three hole defect (L3) photonic crystal cavity fabricated in (111) GaAs. Simulated magnitude of the electric field of the fundamental mode is shown in the inset. Scalebar is 5 μm. (d) Cross polarized reflectivity spectrum of the cavity in (c) with resonance at 1551 nm. (e) Second harmonic spectrum of the cavity in (c) at 600 μW input power. (f) Second harmonic power versus pump power for low pump powers for the same cavity as shown (c)–(e); red line shows quadratic fit.
(a) Second harmonic generation in (111)-GaAs photonic crystal cavities versus input power. Quadratic dependence shown inset on log-log plot. Power versus wavelength at different power levels shown in (i) and (ii). (b) Second harmonic counts versus power versus wavelength for a different structure. (i) and (ii) show the power versus wavelength for two different pump power levels.
Comparison of second harmonic power in pW for L3 cavities in (001) and (111) GaAs for 600 μW input power.
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