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Solution-based silk fibroin dielectric in n-type C60
organic field-effect transistors: Mobility enhancement by the pentacene interlayer
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A pentacene interlayer of 2 nm thick is inserted between fullerene (C60) and the solution-based silk fibroin dielectric in C60 organic field-effect transistors (OFETs). The pentacene interlayer assists to improve crystal quality of the C60 layer, leading to the increase of field-effect mobility (μ FE) from 0.014 to 1 cm2 V−1 s−1 in vacuum. The μ FE value of the C60 OFET is further enhanced to 10 cm2 V−1 s−1 when the OFET is exposed to air in a relative humidity of 55%. Generation of mobile and immobile charged ions in solution-based silk fibroin in air ambient is proposed.
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