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Phosphor-free nanopyramid white light-emitting diodes grown on {} planes using nanospherical-lens photolithography
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10.1063/1.4840137
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    Affiliations:
    1 State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
    2 Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Tsinghua University, Beijing 100084, China
    3 National Microgravity Laboratory, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100080, China
    4 Platform of Characterization & Test, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215000, China
    a) Author to whom correspondence should be addressed. Electronic mail: tbwei@semi.ac.cn. Tel.: +86-10-82305304. Fax: +86-10-82305245.
    Appl. Phys. Lett. 103, 241107 (2013); http://dx.doi.org/10.1063/1.4840137
/content/aip/journal/apl/103/24/10.1063/1.4840137
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/24/10.1063/1.4840137
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Figures

Image of FIG. 1.
FIG. 1.

Schematic illustrations of the process for fabricating phosphor-free nanopyramid white GaN LEDs by NLP method.

Image of FIG. 2.
FIG. 2.

(a) Room-temperature PL spectra from MQWs of nanopyramid LEDs grown on different temperatures, the inset showing the optical microscope image taken from PL measurement. (b) EL emission spectra of the LEDs at a driving current of 20 mA. The inset shows the current–voltage () characteristic curve and a schematic diagram of current distribution of the nanopyramid LEDs. (c) The sunlight spectra (the data from http://www.nrel.gov/rredc/solar_data.html).

Image of FIG. 3.
FIG. 3.

Tilted SEM images of (a) nanopyramid core arrays before MQWs were regrown, (b) nanopyramid LED arrays with SiO mask and (c) after removing SiO, respectively. (d) TEM cross section view of the nanopyramid LED arrays.

Image of FIG. 4.
FIG. 4.

(a) High-magnification cross-sectional TEM image of nanopyramid InGaN/GaN MQWs, taken along the [ ], solid arrow indicating the c axis. TEM images of MQWs formed on (b) upper (The inset shows the corresponding diffraction pattern of the nanopyramid LED), and (c) sidewall areas of the nanopyramid LEDs. The MQW thickness (d) and EDX line profiles (e) formed on (c) along the trapezoid QW (the solid straight lines shown the fitting curves). (f) The EDX intensity of MQWs for the scan line perpendicular to the sidewalls and (g) the corresponding EDX peak intensity.

Image of FIG. 5.
FIG. 5.

(a) SEM images of a single nanopyramid from the apex (A) to the bottom (M) and (b) the corresponding CL spectrum of every localized position. (c)-(h) Monochromatic CL images at the given emission wavelength.

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/content/aip/journal/apl/103/24/10.1063/1.4840137
2013-12-10
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Phosphor-free nanopyramid white light-emitting diodes grown on { 10 1 ¯ 1 } planes using nanospherical-lens photolithography
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/24/10.1063/1.4840137
10.1063/1.4840137
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