1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Investigation of impurities in type-II InAs/GaSb superlattices via capacitance-voltage measurement
Rent:
Rent this article for
USD
10.1063/1.4813479
/content/aip/journal/apl/103/3/10.1063/1.4813479
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/3/10.1063/1.4813479

Figures

Image of FIG. 1.
FIG. 1.

The quantum efficiency at peak responsivity and 50% cut-off wavelength of different designs at 77 K.

Image of FIG. 2.
FIG. 2.

The reduced carrier concentration versus inverse temperature. Region I is the saturation region of 1 kind of shallow level defects. Region II is the extrinsic region—the ionization region of 2 kind of shallow level defects. Region III is the intrinsic region. Different colors stand for different diodes. Each sample has four different sizes diodes.

Image of FIG. 3.
FIG. 3.

The total concentration of 2 kind of shallow level defect in different superlattice designs.

Image of FIG. 4.
FIG. 4.

The activation energy of the 2 kind of defects decreases with the increase in number of InAs ML when the materials are p-type (InAs thickness from 7 to 11 MLs). The activation energy of the n-type material (13MLs of InAs) deviates from the trend.

Tables

Generic image for table
Table I.

Summary of design characteristics.

Loading

Article metrics loading...

/content/aip/journal/apl/103/3/10.1063/1.4813479
2013-07-17
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of impurities in type-II InAs/GaSb superlattices via capacitance-voltage measurement
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/3/10.1063/1.4813479
10.1063/1.4813479
SEARCH_EXPAND_ITEM