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The quantum efficiency at peak responsivity and 50% cut-off wavelength of different designs at 77 K.
The reduced carrier concentration versus inverse temperature. Region I is the saturation region of 1st kind of shallow level defects. Region II is the extrinsic region—the ionization region of 2nd kind of shallow level defects. Region III is the intrinsic region. Different colors stand for different diodes. Each sample has four different sizes diodes.
The total concentration of 2nd kind of shallow level defect in different superlattice designs.
The activation energy of the 2nd kind of defects decreases with the increase in number of InAs ML when the materials are p-type (InAs thickness from 7 to 11 MLs). The activation energy of the n-type material (13MLs of InAs) deviates from the trend.
Summary of design characteristics.
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