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Fast and intense photoluminescence in a SiGe nano-layer embedded in multilayers of Si/SiGe clusters
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10.1063/1.4813560
/content/aip/journal/apl/103/3/10.1063/1.4813560
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/3/10.1063/1.4813560
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Figures

Image of FIG. 1.
FIG. 1.

(a) Annular dark field scanning transmission electron microscopy (ADF-STEM) image and (b) energy dispersive X-ray (EDX) based cross-sectional composition of the sample.

Image of FIG. 2.
FIG. 2.

(a) PL spectra recorded under CW excitation with different (indicated) excitation wavelengths. (b) The PL spectrum recorded under pulsed, 355 nm wavelength and 50 mJ/cm energy density excitation. (c) PL intensity versus excitation energy density for two (indicated) photon detection energies.

Image of FIG. 3.
FIG. 3.

(a) PL decays recorded at different (indicated) photon energies, and(b) associated PL lifetimes as functions of time. The fast and slow decaying PL components were recorded using 50 Ω and 1 kΩ load resistors, respectively.

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/content/aip/journal/apl/103/3/10.1063/1.4813560
2013-07-15
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fast and intense photoluminescence in a SiGe nano-layer embedded in multilayers of Si/SiGe clusters
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/3/10.1063/1.4813560
10.1063/1.4813560
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