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Mechanism of Schottky barrier height modulation by thin dielectric insertion on n-type germanium
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10.1063/1.4813834
/content/aip/journal/apl/103/3/10.1063/1.4813834
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/3/10.1063/1.4813834
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Current-voltage characteristics of the Schottky contacts with different contact metals. The contact structure is (a) metal/TiO (1 nm)/Ge and (b) metal/TiO (7 nm)/Ge.

Image of FIG. 2.
FIG. 2.

Extracted effective Schottky barrier height of the contacts without TiO insertion layer, with 1-nm-thick TiO insertion layer, and with 7-nm-thick TiO insertion layer. The inset shows the extraction of the Schottky barrier height of the TiN/TiO (7 nm)/Ge contacts as an example.

Image of FIG. 3.
FIG. 3.

Extracted effective Schottky barrier height of the contacts after thermal annealing. The inset is the cross-sectional TEM micrograph of the contact with 7-nm-thick TiO insertion layer after 600 °C annealing.

Image of FIG. 4.
FIG. 4.

X-ray diffraction spectra of the contacts with 7-nm-thick TiO insertion layer after annealing at 300, 400, and 600 °C.

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/content/aip/journal/apl/103/3/10.1063/1.4813834
2013-07-16
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mechanism of Schottky barrier height modulation by thin dielectric insertion on n-type germanium
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/3/10.1063/1.4813834
10.1063/1.4813834
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