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Conduction band diagram of one period of the active region at an average field of 120 kV/cm. The shaded area shows the location of the doping. Moduli squared of the relevant wavefunctions are shown. (a) shows the active region as presented in Ref. 12 with a center wavelength of 3.3 μm. (b) Same material system but shifted to a center wavelength of 3.7 μm.
(a) Luminescence simulations (thin lines) and measurements (bold lines) for the heterogeneous active region at different current densities. (b) Simulated gain for both individual cascades and the total gain. The black crosses show the inverted threshold current densities at different wavelengths of the EC spectra.
Light-current-voltage (LIV) characteristics of the chip used in this work. Measured in pulsed mode, 50 ns and 200 kHz. The lasing threshold changes with the different coatings due to the change in mirror reflectivities induced. The measurements for the as cleaved facets, only backside coated laser and additional frontside coated laser were done at 289 K. The external cavity LIV (blue) was taken at 249 K at the wavelength of 2711 cm−1. The threshold at 289 K (corrected for temperature increase by T0 = 154 K) was calculated to be 3.13 A.
Simulation (red dashed) and transmission measurement (blue) of the three layer Al2O3-Si-Al2O3 anti-reflection front facet coating. The green line indicates the 1.4% level, which is the maximum reflectivity calculated and measured for the tuning range. The black square indicates the position and reflectivity of 0.1% calculated from the change in threshold due to facet coating. The shaded area shows the tuning range covered by the device with this coating.
556 cm−1 single mode tuning using an external cavity setup. The spectra at different wavelengths were normalized to the same intensity and the black dots show the relative intensities of the different mode peaks since they were measured by an uncalibrated detector.
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