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AFM topographic images of (a) 4 QLs and (b) 10 QLs Bi2Te3 thin films on mica substrates. Inset in (b) shows a typical RHEED pattern for a 10 QLs Bi2Te3 thin film taken after the growth. (c) Profile along the dash line in (b), showing the height of Bi2Te3. (d) Raman spectrum measured from a 45 QLs Bi2Te3 thin film grown by MBE on a mica substrate. (e) XRD pattern of the sample in θ-θ geometry, indexed in blue for Bi2Te3 thin film and in red for muscovite mica substrate.
(a) Normalized magnetoresistance data of Bi2Te3 thin films measured at 2 K. The inset highlights a deep cusp in MR data of 4, 5, and 6 QLs Bi2Te3 thin films in a relatively low field regime. (b) Conductance change of thinner samples in the low magnetic field regime with the HLN model fit. (d) Temperature dependence of the phase coherence length (Lϕ ) extracted from the HLN fit.
SdH oscillations of a 4 QLs Bi2Te3 thin film. (a) Hall resistance Ryx plotted as a function of magnetic field at 2 K. The lower inset shows the first derivative of Ryx against 1/B. The upper inset shows the FFT of dRyx /dB. (b) Landau level fan diagram for oscillation in dRyx /dB. Maxima and minima in dRyx /dB correspond to n and n + 1/2, respectively. (c) Temperature dependence of the SdH amplitudes of normalized conductivity.
UV-Vis-NIR spectra of Bi2Te3 thin films with different thicknesses on mica.
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