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High-quality Bi2Te3 thin films grown on mica substrates for potential optoelectronic applications
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View: Figures


Image of FIG. 1.
FIG. 1.

AFM topographic images of (a) 4 QLs and (b) 10 QLs BiTe thin films on mica substrates. Inset in (b) shows a typical RHEED pattern for a 10 QLs BiTe thin film taken after the growth. (c) Profile along the dash line in (b), showing the height of BiTe. (d) Raman spectrum measured from a 45 QLs BiTe thin film grown by MBE on a mica substrate. (e) XRD pattern of the sample in θ-θ geometry, indexed in blue for BiTe thin film and in red for muscovite mica substrate.

Image of FIG. 2.
FIG. 2.

(a) Normalized magnetoresistance data of BiTe thin films measured at 2 K. The inset highlights a deep cusp in MR data of 4, 5, and 6 QLs BiTe thin films in a relatively low field regime. (b) Conductance change of thinner samples in the low magnetic field regime with the model fit. (d) Temperature dependence of the phase coherence length () extracted from the fit.

Image of FIG. 3.
FIG. 3.

SdH oscillations of a 4 QLs BiTe thin film. (a) Hall resistance plotted as a function of magnetic field at 2 K. The lower inset shows the first derivative of against 1/B. The upper inset shows the FFT of d/d. (b) Landau level fan diagram for oscillation in d/d. Maxima and minima in d/d correspond to n and n + 1/2, respectively. (c) Temperature dependence of the SdH amplitudes of normalized conductivity.

Image of FIG. 4.
FIG. 4.

UV-Vis-NIR spectra of BiTe thin films with different thicknesses on mica.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-quality Bi2Te3 thin films grown on mica substrates for potential optoelectronic applications