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X-ray diffraction patterns of Mn2.1Ga films grown at different temperatures on seed layers of (a) SrTiO3, (b) MgO, (c) Cr, (d) Mo, (e) Ru, and (f) Fe-buffered Pt. The corresponding lattice constant c and the FWHM of the Mn2.1Ga (004) peaks are shown in (g) and (h). The dashed line corresponds to the c value obtained in bulk materials. 11
AFM images of Mn2.1Ga films grown on seed layers of (a) SrTiO3 at 500 °C, (b) MgO at 400 °C, (c) Cr at 300 °C, (d) Ru at 300 °C, and (e) Pt at250 °C. The sample areas in all the images are 2 μm × 2 μm in size. (f) RMS roughness R q of all the films that crystallized with the D022 phase.
(a) Magnetization curves of the Mn2.1Ga film grown on the Pt seed layer at 450 °C, with the field applied in plane and out of plane, measured at 300 K. (b)–(g) Comparison of out of plane magnetization curves for the films grown on different seed layers at different temperatures, all measured at 300 K. The minor phase components have been subtracted. (h) Saturation magnetization of the films shown in (b)–(g) as a function of deposition temperature.
Crystal properties and sputtering growth conditions of the seed layers. The lattice constant data are from the Pearson database. The lattice mismatch is calculated based on the bulk crystal Mn2.1Ga lattice constant (3.906 Å) (see Ref. 11 ). The 45° in plane rotation of the Cr and Mo lattices have been counted. A positive (negative) lattice mismatch suggests the Mn2.1Ga film is expected to experience tensile (compressive) strain on the corresponding seed layer. The Ru seed layer is amorphous on MgO substrates.
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