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Strong dependence of the tetragonal Mn2.1Ga thin film crystallization temperature window on seed layer
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Image of FIG. 1.
FIG. 1.

X-ray diffraction patterns of MnGa films grown at different temperatures on seed layers of (a) SrTiO, (b) MgO, (c) Cr, (d) Mo, (e) Ru, and (f) Fe-buffered Pt. The corresponding lattice constant and the FWHM of the MnGa (004) peaks are shown in (g) and (h). The dashed line corresponds to the value obtained in bulk materials.

Image of FIG. 2.
FIG. 2.

AFM images of MnGa films grown on seed layers of (a) SrTiO at 500 °C, (b) MgO at 400 °C, (c) Cr at 300 °C, (d) Ru at 300 °C, and (e) Pt at250 °C. The sample areas in all the images are 2 m × 2 m in size. (f) RMS roughness of all the films that crystallized with the 0 phase.

Image of FIG. 3.
FIG. 3.

(a) Magnetization curves of the MnGa film grown on the Pt seed layer at 450 °C, with the field applied in plane and out of plane, measured at 300 K. (b)–(g) Comparison of out of plane magnetization curves for the films grown on different seed layers at different temperatures, all measured at 300 K. The minor phase components have been subtracted. (h) Saturation magnetization of the films shown in (b)–(g) as a function of deposition temperature.


Generic image for table
Table I.

Crystal properties and sputtering growth conditions of the seed layers. The lattice constant data are from the Pearson database. The lattice mismatch is calculated based on the bulk crystal MnGa lattice constant (3.906 Å) (see Ref. ). The 45° in plane rotation of the Cr and Mo lattices have been counted. A positive (negative) lattice mismatch suggests the MnGa film is expected to experience tensile (compressive) strain on the corresponding seed layer. The Ru seed layer is amorphous on MgO substrates.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strong dependence of the tetragonal Mn2.1Ga thin film crystallization temperature window on seed layer