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High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric
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10.1063/1.4816060
/content/aip/journal/apl/103/3/10.1063/1.4816060
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/3/10.1063/1.4816060
/content/aip/journal/apl/103/3/10.1063/1.4816060
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/content/aip/journal/apl/103/3/10.1063/1.4816060
2013-07-18
2014-08-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/3/10.1063/1.4816060
10.1063/1.4816060
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