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High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric
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10.1063/1.4816060
/content/aip/journal/apl/103/3/10.1063/1.4816060
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/3/10.1063/1.4816060

Figures

Image of FIG. 1.
FIG. 1.

(a) XRD patterns of AlO films prepared at different annealing temperatures and AFM images of AlO films prepared at (b) 250 °C, (c) 350 °C, and (d) 500 °C.

Image of FIG. 2.
FIG. 2.

XPS (a) O1s and (b) Al2p spectra of AlO films prepared at different annealing temperatures. (c) Leakage current voltage and capacitance vs frequency curves (inset) of AlO films prepared at different annealing temperatures measured with p-Si/AlOx/Al structures.

Image of FIG. 3.
FIG. 3.

(a) Schematic of the TFT structure, (b) transfer characteristic curves of the InO TFTs fabricated using AlO films prepared at different temperatures as the gate dielectrics. Out-put characteristic curves of the InO TFTs fabricated using (c) AlO-250 °C, (d) AlO-350 °C, and (e) AlO-500 °C as the gate dielectrics. The inset in (e) shows the I V curves measured at zero gate voltage for the TFTs fabricated using AlO dielectrics annealed at different temperatures.

Image of FIG. 4.
FIG. 4.

(a) XRD patterns and (b) O1s XPS spectra of the InO films deposited on AlO films prepared at different annealing temperatures.

Tables

Generic image for table
Table I.

Electrical parameters of InO TFTs fabricated using AlO films annealed at different temperatures as the gate dielectrics.

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/content/aip/journal/apl/103/3/10.1063/1.4816060
2013-07-18
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/3/10.1063/1.4816060
10.1063/1.4816060
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