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Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memory
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10.1063/1.4816162
/content/aip/journal/apl/103/3/10.1063/1.4816162
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/3/10.1063/1.4816162
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Process flow, (b) schematic cross-section of TaN/SiO/n Si-substrate structure, and (c) test structure layout.

Image of FIG. 2.
FIG. 2.

The resistive switching behaviors and forming process (insets) in (a) vacuum and (b) N ambient.

Image of FIG. 3.
FIG. 3.

(a) Average of switching powers, relative permittivity values for LRS and HRS by Frenkel-Poole fitting (inset) and (b) LRS and HRS as a function of N pressure.

Image of FIG. 4.
FIG. 4.

(a) Average current for 20 set/reset cycles for different 20% O-N pressures and recovery process in vacuum (inset). (b) Cumulative probability of switching voltage as function of 20% O-N pressure.

Image of FIG. 5.
FIG. 5.

Initiation of resistive switching failures above 10 Torr of 20% O-N mixture showing the cumulative distribution function (CDF) using bi-modal Monte Carlo simulation fitting for (a) set and (b) reset voltage.

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/content/aip/journal/apl/103/3/10.1063/1.4816162
2013-07-18
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/3/10.1063/1.4816162
10.1063/1.4816162
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