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(a) Process flow, (b) schematic cross-section of TaN/SiO2/n++ Si-substrate structure, and (c) test structure layout.
The resistive switching behaviors and forming process (insets) in (a) vacuum and (b) N2 ambient.
(a) Average of switching powers, relative permittivity values for LRS and HRS by Frenkel-Poole fitting (inset) and (b) LRS and HRS as a function of N2 pressure.
(a) Average current for 20 set/reset cycles for different 20% O2-N2 pressures and recovery process in vacuum (inset). (b) Cumulative probability of switching voltage as function of 20% O2-N2 pressure.
Initiation of resistive switching failures above 10 Torr of 20% O2-N2 mixture showing the cumulative distribution function (CDF) using bi-modal Monte Carlo simulation fitting for (a) set and (b) reset voltage.
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