In this study, a Pt/BiFeO3/TiN device was fabricated and the resistance switchingcharacteristics were investigated. After the first forming process, the conduction path was formed and exhibited unstable bipolar switching characteristics. Subsequently, the original conduction path was destroyed thoroughly by high negative bias. By reconstructing the conduction path after a second forming process (re-forming process), the device exhibits stable bipolar switching characteristics.Transmission electron microscopy analysis indicates that the stability of switching behavior was enhanced because of the joule heating effect, and is an easy way to improve the resistance switchingcharacteristics.
Received 27 May 2013Accepted 05 July 2013Published online 23 July 2013
This work was performed at National Science Council Core Facilities Laboratory for Nano-Science and Nano-Technology in Kaohsiung-Pingtung area, NSYSU Center for Nanoscience and Nanotechnology, and was supported by the National Science Council of the Republic of China under Contract Nos. NSC-102-2120-M-110-001.
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