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(a) Structure of BiFeO3 based RRAM device. (b) I-V curves of forming and re-forming process. Resistive switching characteristics of BiFeO3 after (c) forming process and (d) after re-forming process.
TEM images of BFO film after (a) forming process and (b) re-forming process.
Diagram of (a) initial state, (b) formation of conduction path, (c) annealing process, (d) the destroyed conduction path, and (e) the conduction path reconstruction.
HRS/LRS statistics of switching characteristics (a) after forming process and (b) after re-forming process. (c) Set voltage and (d) reset voltage statistics.
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