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Enhancement of the stability of resistive switching characteristics by conduction path reconstruction
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10.1063/1.4816269
/content/aip/journal/apl/103/4/10.1063/1.4816269
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/4/10.1063/1.4816269
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Structure of BiFeO based RRAM device. (b) I-V curves of forming and re-forming process. Resistive switching characteristics of BiFeO after (c) forming process and (d) after re-forming process.

Image of FIG. 2.
FIG. 2.

TEM images of BFO film after (a) forming process and (b) re-forming process.

Image of FIG. 3.
FIG. 3.

Diagram of (a) initial state, (b) formation of conduction path, (c) annealing process, (d) the destroyed conduction path, and (e) the conduction path reconstruction.

Image of FIG. 4.
FIG. 4.

HRS/LRS statistics of switching characteristics (a) after forming process and (b) after re-forming process. (c) Set voltage and (d) reset voltage statistics.

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/content/aip/journal/apl/103/4/10.1063/1.4816269
2013-07-23
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement of the stability of resistive switching characteristics by conduction path reconstruction
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/4/10.1063/1.4816269
10.1063/1.4816269
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