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Maximum inhibition thickness for ALD ZnO-growth on 200 °C substrates as a function of (a) PMMA and (b) PVP thickness. Different curves correspond to different precursor/purge exposure times. Total ALD cycle time is four times longer (two precursors exposures and two purge exposures).
Printed patterning of TFTs. (a) Ink-jet printed inhibitor pattern for gate, on an oxide-coated silicon substrate for visual contrast. (b) Inhibitor with SALD-deposited AZO. (c) AZO pattern with inhibitor removed. (d) 3D optical profile of a completed TFT with 70 μm long channel. (e) Glass substrate patterned with more than 200 TFTs. (f) Optical microscope image of TFT on glass with width of 400 μm and length of 100 μm.
(a) Transfer curves for a typical patterned-by-printing TFT on glass with W/L = 400/100 μm and oxide thickness of 500 Å. Linear (VD = 0.2 V) and saturation (VD = 16 V) curves are shown, along with gate leakage for both curves. Extracted mobility is 3 cm2/Vs in the linear and closer to 2.3 cm2/Vs for saturation. (b) ID-VD curves for the same TFT. Saturation is very flat.
A comparison of the maximum inhibition thickness of potential inhibitor materials for ZnO growth at 200 °C.
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