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Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films
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10.1063/1.4816349
/content/aip/journal/apl/103/4/10.1063/1.4816349
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/4/10.1063/1.4816349
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Plot of (a) and (c) ln ( ) of various N-GeSe films as a function of photon energy, respectively. The variation in and with the nitrogen concentration in the N-GeSe films are summarized in (b) and (d), respectively. In (b) and (d), the error bars mean the accuracy of the spectroscopic ellipsometry measurement.

Image of FIG. 2.
FIG. 2.

(a) Triangular pulse waveform (rising time: 5 s, falling time: 5 s) used to probe the current-voltage characteristic curve. V and I are also shown. (b) A characteristic current-voltage curve calculated from the pulse waveforms shown in (a). (c) Rectangular pulse waveform (rising: 7 ns, width: 400 ns, falling: 100 ns) used to measure the of the devices. The is graphically defined. (d) Dependence of on V and N concentration.

Image of FIG. 3.
FIG. 3.

of N-GeSe devices as a function of (a) and (b) of N-GeSe films. The error bar means the standard deviation of five samples investigated.

Image of FIG. 4.
FIG. 4.

Schematic illustration of the electronic band structure of N-GeSe and the carrier transport in (a) N-free, (b) low-N, and (c) high-N cases, respectively. denotes trap site in the band gap energy. and denote the conduction band minimum and the Fermi energy, respectively.

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/content/aip/journal/apl/103/4/10.1063/1.4816349
2013-07-25
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/4/10.1063/1.4816349
10.1063/1.4816349
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