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Plot of (a) and (c) ln ( ) of various N-GeSe films as a function of photon energy, respectively. The variation in and with the nitrogen concentration in the N-GeSe films are summarized in (b) and (d), respectively. In (b) and (d), the error bars mean the accuracy of the spectroscopic ellipsometry measurement.
(a) Triangular pulse waveform (rising time: 5 μs, falling time: 5 μs) used to probe the current-voltage characteristic curve. VDUT and Ibias are also shown. (b) A characteristic current-voltage curve calculated from the pulse waveforms shown in (a). (c) Rectangular pulse waveform (rising: 7 ns, width: 400 ns, falling: 100 ns) used to measure the t delay of the devices. The t delay is graphically defined. (d) Dependence of t delay on VDUT and N concentration.
V TH of N-GeSe devices as a function of (a) and (b) of N-GeSe films. The error bar means the standard deviation of five samples investigated.
Schematic illustration of the electronic band structure of N-GeSe and the carrier transport in (a) N-free, (b) low-N, and (c) high-N cases, respectively. D denotes trap site in the band gap energy. E C and E F denote the conduction band minimum and the Fermi energy, respectively.
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