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(a) DC drain current (Vds = 50 mV) in linear and logarithmic scale and reverse gate current degradation (inset) as function of the gate voltage before and after OFF-state stress; (b) gate leakage current as function of the stress time.
Low frequency 1/f channel noise current spectral density in OFF stressed AlGaN/GaN HEMT for Vgs-VT ∼ 0.1 V.
Gate voltage dependence of the normalized current spectral noise density SI/I 2 at 10 Hz: (a) Before stress and immediately after the SBD with the corresponding EL image in the inset; no hot-spots were recorded in fresh devices. (b) Before stress and after 2 h and 30 h of OFF-state stress.
Normalized current spectral noise density SI/I 2 at 10 Hz as function of the drain current during OFF-state stress. Data follow the SVFB (gm/Id )2 characteristic (solid lines).
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