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Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements
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10.1063/1.4816424
/content/aip/journal/apl/103/4/10.1063/1.4816424
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/4/10.1063/1.4816424
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Figures

Image of FIG. 1.
FIG. 1.

(a) DC drain current (V = 50 mV) in linear and logarithmic scale and reverse gate current degradation (inset) as function of the gate voltage before and after OFF-state stress; (b) gate leakage current as function of the stress time.

Image of FIG. 2.
FIG. 2.

Low frequency 1/f channel noise current spectral density in OFF stressed AlGaN/GaN HEMT for V-V ∼ 0.1 V.

Image of FIG. 3.
FIG. 3.

Gate voltage dependence of the normalized current spectral noise density at 10 Hz: (a) Before stress and immediately after the SBD with the corresponding EL image in the inset; no hot-spots were recorded in fresh devices. (b) Before stress and after 2 h and 30 h of OFF-state stress.

Image of FIG. 4.
FIG. 4.

Normalized current spectral noise density at 10 Hz as function of the drain current during OFF-state stress. Data follow the () characteristic (solid lines).

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/content/aip/journal/apl/103/4/10.1063/1.4816424
2013-07-23
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/4/10.1063/1.4816424
10.1063/1.4816424
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