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Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements
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10.1063/1.4816424
/content/aip/journal/apl/103/4/10.1063/1.4816424
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/4/10.1063/1.4816424
/content/aip/journal/apl/103/4/10.1063/1.4816424
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/content/aip/journal/apl/103/4/10.1063/1.4816424
2013-07-23
2014-11-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/4/10.1063/1.4816424
10.1063/1.4816424
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