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High efficiency silicon 1310 nm detector without defect states or heteroepitaxy
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Image of FIG. 1.
FIG. 1.

Device concept inspired by the type-II quantum wells. Comparisons between a type-II InAs/GaSb quantum well and a confined Si p/n junction, which use transitions between energetic carrier states and bound impurity states. Note that the energetic carrier has its wave function “spillover” that lowers the effective thickness of the barrier separating the carrier and the impurity state.

Image of FIG. 2.
FIG. 2.

Schematics of the device. (a) Simulated result of the silicon waveguide detector terminated with a 15  m radius disk supporting whispery gallery modes. (b) Optical micrograph of a 15-m radius disk device. The SiN waveguide (purple line) is butt-coupled to the Si waveguide (earth tone line) connected to the disk. The disk-shaped detector has an n-contact at the center and two p-contacts on the sides.

Image of FIG. 3.
FIG. 3.

Wavelength dependent absorption coefficient. Wavelength dependent modal absorption under different bias voltage for (a) experimental results and (b) theoretical calculations.

Image of FIG. 4.
FIG. 4.

Internal quantum efficiency. Note the different characteristics between the 635 nm data and the 1310 nm data. The former shows the characteristics of a standard p/n detector and the latter shows bias dependent photoresponse for sub-bandgap absorption.

Image of FIG. 5.
FIG. 5.

Spectral response of the device. Measured wavelength-dependent internal quantum efficiency of a 30 μm diameter disk detector under different reverse bias voltages.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High efficiency silicon 1310 nm detector without defect states or heteroepitaxy