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Antimony mediated growth of high-density InAs quantum dots for photovoltaic cells
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10.1063/1.4816503
/content/aip/journal/apl/103/4/10.1063/1.4816503
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/4/10.1063/1.4816503
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Figures

Image of FIG. 1.
FIG. 1.

AFM images (1 × 1 m) of 2.1 ML InAs QDs grown at 500 °C with (a) no Sb, (b) 3 ML Sb, and (c) 6 ML Sb irradiation. (d) Height histograms of QD samples in (a)-(c).

Image of FIG. 2.
FIG. 2.

AFM images (1 × 1 m) of 2.8 ML InAs QDs grown at (a) 500 °C, (b) 485 °C, and (c) 470 °C with 6 ML Sb irradiation. (d) PL spectra of the QD samples in (a)-(c) measured at room temperature. (e) Coherent QD density (filled red square, left axis) and defective cluster density (half-filled blue circle, right axis) as a function of growth temperature.

Image of FIG. 3.
FIG. 3.

AFM images (1 × 1 m) of QDs grown at 485 °C with 6 ML Sb irradiation and InAs coverage of (a) 2.2 ML, (b) 2.35 ML, (c) 2.5 ML, (d) 2.65 ML, (e) 2.8 ML. (f) Coherent QD density (filled red square, left axis) and defective cluster density (half-filled blue circle, right axis) as a function of InAs coverage. (g) Normalized room temperature PL spectra of the QD samples in (a)-(e). (h) Height histograms of QD samples in (a)-(e).

Image of FIG. 4.
FIG. 4.

(a) Current density-voltage characteristics and (b) external quantum efficiency of the reference GaAs solar cell, reference QDSC, and high density QDSC. The current density-voltage characteristics were measured under one sun AM1.5 illumination. (c) External quantum efficiency ratio between reference QDSC and high density QDSC. The inset is the PL spectra of the QDSCs measured at 300 K.

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/content/aip/journal/apl/103/4/10.1063/1.4816503
2013-07-22
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Antimony mediated growth of high-density InAs quantum dots for photovoltaic cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/4/10.1063/1.4816503
10.1063/1.4816503
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