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/content/aip/journal/apl/103/4/10.1063/1.4816519
2013-07-25
2015-08-31

Abstract

The optical properties of GaNSb alloys with N contents of up to 2.5% have been investigated at room temperature using infrared absorption spectroscopy. The evolution of the absorption onsets with N content has been described using a three level band anticrossing model of the N localized states interactions with the GaSb conduction band. This approach includes the effect of N pair states, which is critical to reproduce the observed optical properties. This confirms theoretical predictions that N pair states have a more pronounced effect on the band dispersion in GaNSb than in GaNAs.

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Scitation: Optical absorption by dilute GaNSb alloys: Influence of N pair states
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/4/10.1063/1.4816519
10.1063/1.4816519
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