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RBS measurements of backscattered intensity counts versus energy channel number, along a random direction and along an aligned channeling direction. The SIMNRA simulation (solid line in the figure) indicated a composition of 6.5 at. % of Sn, with 97.7% of this Sn on substitutional Ge lattice sites.
Intensity versus diffraction angle for the symmetric (0 0 4) ω-2θ x-ray reflections of different Ge1−xSnx compositions. The angles were shifted so that the Bragg angles, θ (same as ω for (004) reflection), of the Ge substrate (0 0 4) peaks were located at the theoretical value. The diffraction curves were vertically offset for clarity.
Reciprocal space map of diffraction intensity contours versus reciprocal lattice vectors in the horizontal and vertical directions, for Ge0.935Sn0.065 alloy, for the asymmetric (2 2 4) x-ray reflection showing that the alloy was completely strained (the substrate and layer peak lie on the same Q‖).
Bulk lattice constant (a 0) versus the atomic fraction of Sn. The squares are the experimental bulk lattice constants obtained from XRD calculations (in some samples, the data markers are bigger than the vertical error bars), the solid superimposed line is fit to the quadratic function [a 0 = aSnx + aGe (1 − x) + bx(1 − x)], and the dashed line corresponds to the linear interpolation of the bulk lattice constants of Ge and cubic Sn.
RBS channeling parameters of the Ge1 −xSn x alloys with values for total Sn composition, percentage of the Sn that was on substitutional lattice sites (S), and the thickness of the alloys.
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