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Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy
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Image of FIG. 1.
FIG. 1.

RBS measurements of backscattered intensity counts versus energy channel number, along a random direction and along an aligned channeling direction. The SIMNRA simulation (solid line in the figure) indicated a composition of 6.5 at. % of Sn, with 97.7% of this Sn on substitutional Ge lattice sites.

Image of FIG. 2.
FIG. 2.

Intensity versus diffraction angle for the symmetric (0 0 4) -2 x-ray reflections of different GeSn compositions. The angles were shifted so that the Bragg angles, θ (same as ω for (004) reflection), of the Ge substrate (0 0 4) peaks were located at the theoretical value. The diffraction curves were vertically offset for clarity.

Image of FIG. 3.
FIG. 3.

Reciprocal space map of diffraction intensity contours versus reciprocal lattice vectors in the horizontal and vertical directions, for GeSn alloy, for the asymmetric (2 2 4) x-ray reflection showing that the alloy was completely strained (the substrate and layer peak lie on the same Q).

Image of FIG. 4.
FIG. 4.

Bulk lattice constant ( ) versus the atomic fraction of Sn. The squares are the experimental bulk lattice constants obtained from XRD calculations (in some samples, the data markers are bigger than the vertical error bars), the solid superimposed line is fit to the quadratic function [  =  + (1 − ) + (1 − )], and the dashed line corresponds to the linear interpolation of the bulk lattice constants of Ge and cubic Sn.


Generic image for table
Table I.

RBS channeling parameters of the Ge Sn alloys with values for total Sn composition, percentage of the Sn that was on substitutional lattice sites (S), and the thickness of the alloys.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy