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XRD θ−2θ scans for 20-nm and 175-nm thick Sr2CrReO6 films deposited on (001)-oriented (a) SrTiO3, (b) LSAT, and (c) Sr2CrNbO6 buffer layers on SrTiO3. The Laue oscillations in (a) and (c) indicate sharp interfaces and high uniformity of the films. The large lattice mismatch between Sr2CrReO6 and LSAT leads to strain relaxation and less clear Laue oscillations in (b).
(a) Semi-log ρ vs. T plots for the six Sr2CrReO6 films and (b) Arrhenius plots lnρ vs. 1000/T of the six films between 100 and 200 K, from which the activation energies are extracted by linear fits as shown in Table I .
HAADF STEM images of 175-nm thick Sr2CrReO6 films on (a) SrTiO3 and (b) Sr2CrNbO6/SrTiO3, showing sharp interfaces and little strain. High-magnification STEM images show the interfaces (c) between Sr2CrReO6 and SrTiO3 and (d) between Sr2CrReO6 and Sr2CrNbO6. The thickness of the Cr/Re disordered layer is 4 to 5 nm in (c) and <2 nm in (d) near the interface. (e) the STEM image of Sr2CrReO6 shows pronounced Cr/Re ordering away from the interface, which can be observed in both samples. The upper-left inset of (e) is a simulated HAADF-STEM cross-section for Sr2CrReO6.
Magnetic hysteresis loops of (a) 20-nm and (b) 175-nm thick Sr2CrReO6 films grown on SrTiO3, LSAT, and Sr2CrNbO6/SrTiO3 at T = 30 K in magnetic fields up to 7 T.
Structural parameters and activation energies of the 20-nm and 175-nm thick Sr2CrReO6 films grown on three substrates or buffer layers. For structural comparison, the in-plane lattice constants of SrTiO3, LSAT, and Sr2CrNbO6/SrTiO3 are 3.905 Å, 3.868 Å, and 3.905 Å, respectively.
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