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Buffer-layer enhanced structural and electronic quality in ferrimagnetic Sr2CrReO6 epitaxial films
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Image of FIG. 1.
FIG. 1.

XRD −2 scans for 20-nm and 175-nm thick SrCrReO films deposited on (001)-oriented (a) SrTiO, (b) LSAT, and (c) SrCrNbO buffer layers on SrTiO. The Laue oscillations in (a) and (c) indicate sharp interfaces and high uniformity of the films. The large lattice mismatch between SrCrReO and LSAT leads to strain relaxation and less clear Laue oscillations in (b).

Image of FIG. 2.
FIG. 2.

(a) Semi-log vs. plots for the six SrCrReO films and (b) Arrhenius plots ln vs. 1000/ of the six films between 100 and 200 K, from which the activation energies are extracted by linear fits as shown in Table I .

Image of FIG. 3.
FIG. 3.

HAADF STEM images of 175-nm thick SrCrReO films on (a) SrTiO and (b) SrCrNbO/SrTiO, showing sharp interfaces and little strain. High-magnification STEM images show the interfaces (c) between SrCrReO and SrTiO and (d) between SrCrReO and SrCrNbO. The thickness of the Cr/Re disordered layer is 4 to 5 nm in (c) and <2 nm in (d) near the interface. (e) the STEM image of SrCrReO shows pronounced Cr/Re ordering away from the interface, which can be observed in both samples. The upper-left inset of (e) is a simulated HAADF-STEM cross-section for SrCrReO.

Image of FIG. 4.
FIG. 4.

Magnetic hysteresis loops of (a) 20-nm and (b) 175-nm thick SrCrReO films grown on SrTiO, LSAT, and SrCrNbO/SrTiO at  = 30 K in magnetic fields up to 7 T.


Generic image for table
Table I.

Structural parameters and activation energies of the 20-nm and 175-nm thick SrCrReO films grown on three substrates or buffer layers. For structural comparison, the in-plane lattice constants of SrTiO, LSAT, and SrCrNbO/SrTiO are 3.905 Å, 3.868 Å, and 3.905 Å, respectively.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Buffer-layer enhanced structural and electronic quality in ferrimagnetic Sr2CrReO6 epitaxial films