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Scanning tunneling microscope study of electrical transport properties of nanoscale Schottky contacts between manganese silicide nanostructures and Si(111)
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10.1063/1.4816962
/content/aip/journal/apl/103/4/10.1063/1.4816962
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/4/10.1063/1.4816962
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Figures

Image of FIG. 1.
FIG. 1.

Dependence of on the displacement Δ of STM tip. Δ = 0 corresponds to the original distance between the tip and the silicide island surface, which is determined by the feedback condition with  = 1.2 V and  = 0.1 nA. Δ < 0 means that the tip moves toward the silicide island surface.

Image of FIG. 2.
FIG. 2.

(a) STM image (1000 × 1000 nm) of the manganese silicide islands grown on Si(111) substrate at ∼550 °C. Types A, B, and C represent tabular islands, 3D islands, and NWs, respectively. (b) The magnified STM image (160 × 160 nm) of a typical tabular island. (c) 3D image of a magnified 3D island. (d) curves measured on types A, B, and C three kinds of manganese silicide islands with the tip contacting the islands. These curves exhibit a Schottky diode-like rectifying behavior. The inset is a magnified plot of the curves at reverse-bias voltages. It shows that the increase of with reverse bias is nonlinear, indicating that the leakage current is not Ohmic in nature.

Image of FIG. 3.
FIG. 3.

curves measured on three tabular islands with contact area of 1250, 2600, and 9900 nm. They show that the characteristics of the silicide nanocontacts have no obvious dependence on the contact area.

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/content/aip/journal/apl/103/4/10.1063/1.4816962
2013-07-25
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Scanning tunneling microscope study of electrical transport properties of nanoscale Schottky contacts between manganese silicide nanostructures and Si(111)
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/4/10.1063/1.4816962
10.1063/1.4816962
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