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Typical current-voltage characteristics of (a) Ni(200 nm)/Al2O3/InGaAs and (b) Au(200 nm)/Ti(2 nm)/Al2O3/InGaAs samples, and (c) breakdown voltage behavior after 30 min vacuum anneal at different temperatures.
Typical frequency dependent C-V characteristics of (a) Ni(200 nm)/Al2O3/InGaAs and (b) Au(200 nm)/Ti(2 nm)/Al2O3/InGaAs samples annealed at 400 °C for 30 min. (c) Flat-band voltage versus annealing temperature.
Cross sectional HR-TEM pictures of Ni(200 nm)/Al2O3/InGaAs of (a) as deposited and (b) after 500 °C 30 min vacuum annealing.
TOF-SIMS elements profiles of (a) and (c) Ni(15 nm)/Al2O3/InGaAs and (b) and (d) Au(10 nm)/Ti(5 nm)/Al2O3/InGaAs gate stacks. The continuous lines correspond to as deposited samples and dotted lines to 400 °C 30 min vacuum annealed samples.
Indium diffusion parameters in the selected metals.
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