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Indium outdiffusion and leakage degradation in metal/Al2O3/In0.53Ga0.47As capacitors
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10.1063/1.4816588
/content/aip/journal/apl/103/5/10.1063/1.4816588
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/5/10.1063/1.4816588

Figures

Image of FIG. 1.
FIG. 1.

Typical current-voltage characteristics of (a) Ni(200 nm)/AlO/InGaAs and (b) Au(200 nm)/Ti(2 nm)/AlO/InGaAs samples, and (c) breakdown voltage behavior after 30 min vacuum anneal at different temperatures.

Image of FIG. 2.
FIG. 2.

Typical frequency dependent C-V characteristics of (a) Ni(200 nm)/AlO/InGaAs and (b) Au(200 nm)/Ti(2 nm)/AlO/InGaAs samples annealed at 400 °C for 30 min. (c) Flat-band voltage versus annealing temperature.

Image of FIG. 3.
FIG. 3.

Cross sectional HR-TEM pictures of Ni(200 nm)/AlO/InGaAs of (a) as deposited and (b) after 500 °C 30 min vacuum annealing.

Image of FIG. 4.
FIG. 4.

TOF-SIMS elements profiles of (a) and (c) Ni(15 nm)/AlO/InGaAs and (b) and (d) Au(10 nm)/Ti(5 nm)/AlO/InGaAs gate stacks. The continuous lines correspond to as deposited samples and dotted lines to 400 °C 30 min vacuum annealed samples.

Tables

Generic image for table
Table I.

Indium diffusion parameters in the selected metals.

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/content/aip/journal/apl/103/5/10.1063/1.4816588
2013-07-29
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Indium outdiffusion and leakage degradation in metal/Al2O3/In0.53Ga0.47As capacitors
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/5/10.1063/1.4816588
10.1063/1.4816588
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