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(a) Field dependence of magnetization for In0.96Mn0.04As thin film showing clear hysteresis at 5 K and 300 K. (b) The current-voltage characteristics of the diodes measured for different Mn concentrations.
(a) The I-V characteristics at 300 K for p-In0.94Mn0.06As/n-InAs in the presence of a magnetic field from 0 to 7T. The field is applied parallel to the direction of current flow. (b) Variation of forward bias current with increasing magnetic field at a fixed voltage of 0.45 V for x Mn = 0.025 and 0.04.
(a) Least-squares fit of the conductance of the heterojunction with x Mn = 0.04 at 300 K for the two band model described by Eq. (1) . (b) Plot of geff vs x. The value of .
(a) I-V characteristics of the diode at 300 K, 150 K, and 50 K in thepresence and absence of an external magnetic field. (b) Normalized current vs. field for a p-In0.96Mn0.04As/n-InAs diode at 300 K, 150 K, and 50 K.
Values of g eff at 300 K for varying Mn concentration.
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