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Magnetoresistance in InMnAs/InAs heterojunctions and its dependence on alloy composition and temperature
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10.1063/1.4816958
/content/aip/journal/apl/103/5/10.1063/1.4816958
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/5/10.1063/1.4816958

Figures

Image of FIG. 1.
FIG. 1.

(a) Field dependence of magnetization for InMnAs thin film showing clear hysteresis at 5 K and 300 K. (b) The current-voltage characteristics of the diodes measured for different Mn concentrations.

Image of FIG. 2.
FIG. 2.

(a) The I-V characteristics at 300 K for -InMnAs/-InAs in the presence of a magnetic field from 0 to 7T. The field is applied parallel to the direction of current flow. (b) Variation of forward bias current with increasing magnetic field at a fixed voltage of 0.45 V for  = 0.025 and 0.04.

Image of FIG. 3.
FIG. 3.

(a) Least-squares fit of the conductance of the heterojunction with  = 0.04 at 300 K for the two band model described by Eq. (1) . (b) Plot of g vs x. The value of .

Image of FIG. 4.
FIG. 4.

(a) I-V characteristics of the diode at 300 K, 150 K, and 50 K in thepresence and absence of an external magnetic field. (b) Normalized current vs. field for a -InMnAs/-InAs diode at 300 K, 150 K, and 50 K.

Tables

Generic image for table
Table I.

Values of at 300 K for varying Mn concentration.

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/content/aip/journal/apl/103/5/10.1063/1.4816958
2013-07-30
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Magnetoresistance in InMnAs/InAs heterojunctions and its dependence on alloy composition and temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/5/10.1063/1.4816958
10.1063/1.4816958
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