1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Influence of a Ta spacer on the magnetic and transport properties of perpendicular magnetic tunnel junctions
Rent:
Rent this article for
USD
10.1063/1.4816968
/content/aip/journal/apl/103/5/10.1063/1.4816968
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/5/10.1063/1.4816968
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical EHE loop for x = 0 nm. The red curve shows the minor cycle of the soft layer.

Image of FIG. 2.
FIG. 2.

Part of the EHE hysteresis loops (between +4 and −1kOe) for x = 0.4, 0.5, and 0.6 nm.

Image of FIG. 3.
FIG. 3.

Relative Hall contribution of the in-plane component of the bottom electrode as a function of the Ta insertion thickness.

Image of FIG. 4.
FIG. 4.

Variation as a function of the Ta insertion thickness of (a) the perpendicular anisotropy field of the in-plane contribution (black circles, right-hand scale) and (b) the coupling field between the bottom and top magnetic layers through the MgO barrier (red triangles, left-hand scale).

Image of FIG. 5.
FIG. 5.

TMR evolution as a function of the Ta insertion thickness.

Loading

Article metrics loading...

/content/aip/journal/apl/103/5/10.1063/1.4816968
2013-07-29
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of a Ta spacer on the magnetic and transport properties of perpendicular magnetic tunnel junctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/5/10.1063/1.4816968
10.1063/1.4816968
SEARCH_EXPAND_ITEM