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Band gap prediction for composition-tunable alloyed semiconductor nanocrystals
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10.1063/1.4816972
Lihua Gao1 and Faming Gao1,a)
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Affiliations:
1 Key Laboratory of Applied Chemistry, Department of Applied Chemistry, Yanshan University, Qinhuangdao 066004, China
a) Email: fmgao@ysu.edu.cn
Appl. Phys. Lett. 103, 053101 (2013)
/content/aip/journal/apl/103/5/10.1063/1.4816972
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/5/10.1063/1.4816972
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## Figures

FIG. 1.

functions for zb-(ZnS)(CdS) nanocrystal alloys with the diameters of (a) 4.4 and (b) 9.0 nm, and (ZnSe)(CdSe) with the diameter of (c) 10.0 nm, respectively. The solid lines denote the calculated band gap energies of zinc blende structure. The red dashed line in (c) denotes the calculated band gap energy of (ZnSe)(CdSe) with wurtzite structure. The experimental results are represented by ▲ (see Ref. ), ◆ (see Ref. ), and ★ (see Ref. ) for 4.4, 9, and 10 nm, respectively.

FIG. 2.

functions for zb-(CdS)(CdSe) nanocrystal alloy with the diameters of 2.8, 3.1, 4.3, 3.6, and 5.8 nm, respectively. The solid lines denote the calculated band gaps, and the symbols represent the experimental results (see Ref. ).

FIG. 3.

functions for w-(ZnS)(CdS) nanocrystal alloy with the diameters of 4.8, 5.8, 6.4, and 8.0 nm, respectively. The solid lines denote the calculated band gaps and the symbols represent the experimental results (see Ref. ).

FIG. 4.

functions for w-(ZnSe)(CdSe) nanocrystal alloy with the diameters of 5.2, 5.8, 6.3, 6.8, and 7.5 nm, respectively. The symbols represent the experimental results (see Ref. ).

FIG. 5.

functions for w-(CdSe)(CdTe) with  = 3.5, 5.0, and 6.5 nm, respectively. The symbols represent the experimental results (see Ref. ).

/content/aip/journal/apl/103/5/10.1063/1.4816972
2013-07-29
2014-04-25

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