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Detection of interfacial Pb centers in Si/SiO2 metal-oxide-semiconducting field-effect transistors via zero-field spin dependent recombination with observation of precursor pair spin-spin interactions
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10.1063/1.4817264
/content/aip/journal/apl/103/5/10.1063/1.4817264
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/5/10.1063/1.4817264
/content/aip/journal/apl/103/5/10.1063/1.4817264
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/content/aip/journal/apl/103/5/10.1063/1.4817264
2013-07-30
2014-08-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Detection of interfacial Pb centers in Si/SiO2 metal-oxide-semiconducting field-effect transistors via zero-field spin dependent recombination with observation of precursor pair spin-spin interactions
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/5/10.1063/1.4817264
10.1063/1.4817264
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