1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Detection of interfacial Pb centers in Si/SiO2 metal-oxide-semiconducting field-effect transistors via zero-field spin dependent recombination with observation of precursor pair spin-spin interactions
Rent:
Rent this article for
USD
10.1063/1.4817264
/content/aip/journal/apl/103/5/10.1063/1.4817264
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/5/10.1063/1.4817264
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Comparison of the DCIV measurements (bottom, red) pre and (top, blue) post stress. The mild stressing conditions involved applying a −25 V to the gate of the MOSFET for 10 000 s at 150 °C. The increase in the amplitudes of the two peaks indicates that a significant number of defects were created at the Si/SiO interface. (b) Comparison of low-field measurements made (bottom, red) pre and (top, blue) post stress. (The pre stress spectrum is offset by 4 pA for clarity.)

Image of FIG. 2.
FIG. 2.

Illustration of the energies associated with triplet and singlet pairs as a function of magnetic field (b) with and (a) without exchange and dipolar coupling. When the spins experience an exchange and or a dipolar interaction, the degeneracy of the singlet and triplet energy levels at zero Gauss is lifted, thereby causing the mixing phenomenon to occur at very small negative and positive fields. (c) Comparison of measurements taken (top, blue) with and (bottom, red) without EM radiation when biased with +1.50 V. (d) Comparison of measurements taken (top, blue) with and (bottom, red) without EM radiation when biased with −0.3 V.

Image of FIG. 3.
FIG. 3.

Comparison of the zero-field and low-field ( amplitude responses as a function of applied oscillating magnetic field when the MOSFET was biased with and .

Image of FIG. 4.
FIG. 4.

(a) Illustration of the zero-field and low-field amplitude responses as a function of applied bias plotted against the current measured in the DCIV method. Note that the zero-field response is highly correlated with the low-field and DCIV responses. This is direct evidence that the zero-field signal is due to spin dependent recombination at the Si/SiO interface of the MOSFET. (b) Three dimensional mesh plot of the integrated zero-field spectra used to plot the amplitude response in (a).

Image of FIG. 5.
FIG. 5.

Comparison of (top) high-field , (middle), low-field , and (bottom) zero-field signal (no applied radiation). Note that the two signals observed at high-field are unresolvable in the zero- and low-field measurements because of the reduction in resolution that occurs when making measurements at low magnetic fields.

Loading

Article metrics loading...

/content/aip/journal/apl/103/5/10.1063/1.4817264
2013-07-30
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Detection of interfacial Pb centers in Si/SiO2 metal-oxide-semiconducting field-effect transistors via zero-field spin dependent recombination with observation of precursor pair spin-spin interactions
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/5/10.1063/1.4817264
10.1063/1.4817264
SEARCH_EXPAND_ITEM