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Scanning electron micrographs of Nb2O5 nanofibers calcined at 700 °C for 1 h in air.
XRD CuK α radiation pattern of Nb2O5 nanofibers annealed at 700 °C in air. Nb2O5 Bragg reflections are notified by Miller indices for orthorhombic unit cell (Refs. 13 and 14 ). Inset shows the Raman spectrum of Nb2O5 fibers.
I-V characteristics of DLC/Nb2O5 nanofiber/Pt junction recorded in a constant voltage mode with a 100 kΩ ballast resistor. The voltage drop across the tip and the ballast resistor were subtracted, so hereinafter R and V stand for a fiber resistance and a voltage applied directly to the fiber, respectively. “Forward” and “Reverse” directions correspond, respectively, to a positive and a negative voltage applied to the DLC tip. Ascending branch of the curve 1 shown with triangular symbols Δ was recorded for a fresh “virgin” contact between AFM probe and the fiber. Continuous sequence of I-V loops is denoted by Nos. 1-1-2-2-3-4-5-6-6-7. Underlined numerics mark loops traced in the reverse direction. Bias voltage was swept at first with the rate of 0.25 V/s within ±1.5 V, then 0.5 V/s and 1 V/s in the forward and reverse directions, respectively.
Symbols: experimental -ImZ−ReZ plot for the low resistance state of DLC/Nb2O5 fiber/Pt memory cell. Solid line: Cole-Cole fit with serially connected inductor L = 5 mH and parallel connected resistor R ac = 680 kΩ with a capacitor C = 1.7 pF.
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