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Nb2O5 nanofiber memristor
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View: Figures


Image of FIG. 1.
FIG. 1.

Scanning electron micrographs of NbO nanofibers calcined at 700 °C for 1 h in air.

Image of FIG. 2.
FIG. 2.

XRD Cu radiation pattern of NbO nanofibers annealed at 700 °C in air. NbO Bragg reflections are notified by Miller indices for orthorhombic unit cell (Refs. ). Inset shows the Raman spectrum of NbO fibers.

Image of FIG. 3.
FIG. 3.

characteristics of DLC/NbO nanofiber/Pt junction recorded in a with a 100 kΩ ballast resistor. The voltage drop across the tip and the ballast resistor were subtracted, so hereinafter and stand for a fiber resistance and a voltage applied directly to the fiber, respectively. “Forward” and “Reverse” directions correspond, respectively, to a positive and a negative voltage applied to the DLC tip. Ascending branch of the curve 1 shown with triangular symbols Δ was recorded for a fresh “virgin” contact between AFM probe and the fiber. Continuous sequence of loops is denoted by Nos. 1--2--3-4-5-6--7. Underlined numerics mark loops traced in the reverse direction. Bias voltage was swept at first with the rate of 0.25 V/s within ±1.5 V, then 0.5 V/s and 1 V/s in the forward and reverse directions, respectively.

Image of FIG. 4.
FIG. 4.

Forward part of characteristics Nos. 1, 2, 3, and 7 from Fig. 3 . Solid lines show fitting of experimental data No. 7 to Eqs. (1) and (2) . Inset shows schematics of AFM spreading resistance test.

Image of FIG. 5.
FIG. 5.

Symbols: experimental -ImRe plot for the low resistance state of DLC/NbO fiber/Pt memory cell. Solid line: Cole-Cole fit with serially connected inductor  = 5 mH and parallel connected resistor  = 680 kΩ with a capacitor  = 1.7 pF.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nb2O5 nanofiber memristor