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Effective lifetime vs. excess carrier density measured on ip/in passivated wafers with different thickness and calculated iVOC.
Effective lifetime vs. excess carrier density measured on a representative wafer after ip/in deposition and after ITO deposition.
Implied IV curve of a non-metalized SHJ solar cell measured by Suns-VOC with the voltage probe location labeled by the star. This spot produced 753.4 mV VOC and 83.9% pseudo FF. The figure also shows a PL image of the measured solar cell with the circle indicating the area sensed by the RF coil of the Sinton tester.
The components of the effective lifetime of the representative solar cell due to different recombination mechanisms.
Calculated VOC limit vs. wafer thickness for different current-recombination assumptions. The inset shows generation current vs. wafer thickness calculated for LT1 and LT3 light trapping cases.
Calculated generation current for 100-μm-thick wafer for three light trapping cases. Note that LT2 and LT3 include front grid shading and represent the JSC of a complete solar cell (neglecting recombination at JSC).
The parameters used to simulate the VOC of SHJ solar cells.
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