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>750 mV open circuit voltage measured on 50 μm thick silicon heterojunction solar cell
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10.1063/1.4817723
/content/aip/journal/apl/103/5/10.1063/1.4817723
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/5/10.1063/1.4817723

Figures

Image of FIG. 1.
FIG. 1.

Effective lifetime vs. excess carrier density measured on ip/in passivated wafers with different thickness and calculated iV.

Image of FIG. 2.
FIG. 2.

Effective lifetime vs. excess carrier density measured on a representative wafer after ip/in deposition and after ITO deposition.

Image of FIG. 3.
FIG. 3.

Implied IV curve of a non-metalized SHJ solar cell measured by Suns-V with the voltage probe location labeled by the star. This spot produced 753.4 mV V and 83.9% pseudo FF. The figure also shows a PL image of the measured solar cell with the circle indicating the area sensed by the RF coil of the Sinton tester.

Image of FIG. 4.
FIG. 4.

The components of the effective lifetime of the representative solar cell due to different recombination mechanisms.

Image of FIG. 5.
FIG. 5.

Calculated V limit vs. wafer thickness for different current-recombination assumptions. The inset shows generation current vs. wafer thickness calculated for LT1 and LT3 light trapping cases.

Tables

Generic image for table
Table I.

Calculated generation current for 100-m-thick wafer for three light trapping cases. Note that LT2 and LT3 include front grid shading and represent the J of a complete solar cell (neglecting recombination at J).

Generic image for table
Table II.

The parameters used to simulate the V of SHJ solar cells.

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/content/aip/journal/apl/103/5/10.1063/1.4817723
2013-08-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: >750 mV open circuit voltage measured on 50 μm thick silicon heterojunction solar cell
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/5/10.1063/1.4817723
10.1063/1.4817723
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