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Temperature dependence of the in-plane resistance ( ) for a microbridge with various thicknesses from 276.5 to 18 nm. Here, the curves were measured after each time of ion-milling process. The h was confirmed from ion-milling thickness and Rab at 300 K, according to a linear function between (300 K) and h as given by the inset of the figure.
In-plane magnetoresistivity as a function of temperature under fields from 0 to 8.5 T. The microbridge was with W = 2 μm and h = 91 nm. The fields were applied along the c-axis for (a) and the ab-plane for (b). Inset (a) shows optical microscopic image of the microbridge. Inset (b) gives , , and the anisotropy factor at temperatures near Tc , here the was defined from the resistivity transition midpoint. We can hardly obtain the for 36 K restricted by the used measurement system, instead we can roughly estimate (36 K) 26.3 T and (36 K) 11.8 T from the near linear change of and , respectively. The as well can be roughly considered as constant below 38.5 K, i.e., (36 K) .
The Jc dependence on normalized temperature ( ) for the microbridge with 2 μm in width and 91 nm in thickness. The experimental data of Jc are from Ic s directly, the solid line is the fitting by a two-gap s-wave GL model. Inset gives the IVCs at temperatures from 35 to 39 K, where the colored arrows indicate current bias increasing and decreasing process.
Jc under different magnetic field and field directions. Here all of the data are obtain at temperature of 36 K. The θ corresponds to the angle between H and c-axis, and . The was fit by using the scaling function of effective field , where , and is the effective mass anisotropy.
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