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Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction
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10.1063/1.4818620
/content/aip/journal/apl/103/7/10.1063/1.4818620
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/7/10.1063/1.4818620
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Device structure.

Image of FIG. 2.
FIG. 2.

Dependence of current-voltage characteristics on intensity of UV-light illumination.

Image of FIG. 3.
FIG. 3.

Relationship between current response of photodiode under reverse bias of 2 V and relative intensity of UV-light.

Image of FIG. 4.
FIG. 4.

Spectral response of photodiode based on β-GaO/SiC heterojunction.

Image of FIG. 5.
FIG. 5.

Expected band structure of photodiode under zero bias (a) and 2 V in reverse (b). (c) Schematic light intensity profiles with two different energies.

Image of FIG. 6.
FIG. 6.

(a) Reverse-current response of photodiode to deep-UV light pulses. Reverse-bias voltage is 2 V. (b) Light waveform measured by silicon pin photodiode for same light pulses.

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/content/aip/journal/apl/103/7/10.1063/1.4818620
2013-08-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/7/10.1063/1.4818620
10.1063/1.4818620
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