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(a) Sheet resistance vs. temperature of Al-Sb films with a heating rate of 40 °C/min. Inset is E as of crystallization calculated from Kissinger's method; (b) plots of data lifetime vs. 1/K b T, showing the data retention capability of Al-Sb films.
(a) The temperature dependence of XRD patterns for Al50Sb50 film from room temperature to 350 °C at 40 °C/min; (b) the corresponding calculated crystal grain size and FWHM in the Sb (012) peak as a function of annealing temperature.
Plots of (αhν)1/2 vs. hν for amorphous Al-Sb films. Inset shows the variation of absorption coefficient (α) with photon energy (hν).
Raman scattering spectra of (a) as-deposited and (b) 250 °C-annealed Al-Sb films. All the spectra between 230 and 360 cm−1 are scaled to higher intensity for comparison, and the scaling factors are given in the figure.
(a) TEM BF image and the corresponding SAED patterns of the crystalline Al50Sb50 phase change material. The HRTEM images from the red boxes in (a) are shown in (b) region A and (c) region B with the corresponding FFT diffraction patterns in the insets, indicating the polycrystalline (b) and amorphous (c) structures, respectively.
R-V curves of PCM cell using Al50Sb50 film with different reset pulse widths. Inset presents I-V curves obtained with dc mode. Each curve in the figure is representative of more than 10 PCM cells.
Composition of Al-Sb films and the corresponding T c, T r, and E a. The E as estimated from isothermal and non-isothermal process are quite similar and the adjusted statistical coefficient of determination (R 2) is very close to 1 in both processes, representing a reliable fit.
Optical parameters, E OP, B 1/2, and U for amorphous Al-Sb films.
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