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Characterization of polishing induced defects and hydrofluoric acid passivation effect in ZnO
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10.1063/1.4818712
/content/aip/journal/apl/103/7/10.1063/1.4818712
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/7/10.1063/1.4818712

Figures

Image of FIG. 1.
FIG. 1.

80 K DRCLS spectra of (0001) ZnO at various depth up to 1500 nm after (a) mechanical polishing with 6 m to ¼ m diamond slurry and (b) subsequent HF etching. Mechanical polishing decreases NBE luminescence efficiency and shifts defect peak intensity from ∼2.4 eV to ∼2.05 eV in near-surface regions, while HF etching increases (decreases) near-surface NBE (∼2.05 eV) emission intensities.

Image of FIG. 2.
FIG. 2.

80 K DRCLS spectra comparison of polished ZnO sample d1 and subsequently HF etched ZnO sample d2. The spectra are normalized relative to NBE at 3.353 eV. Inset shows maximum relative deep level defect to NBE intensities versus sampling depth. HF etching decreases the deep band emission intensity by approximately an order of magnitude.

Image of FIG. 3.
FIG. 3.

SPS spectra of (a) mechanically polished ZnO sample d1 and (b) subsequent HF etched ZnO sample d2. HF etching removes 2.0/2.05 eV and reduces 1.3 eV defect features.

Image of FIG. 4.
FIG. 4.

T-SPS transient at 2.3 eV of polished and HF etched ZnO showing parameters for Eq. (2) .

Tables

Generic image for table
Table I.

Transient SPS defect densities calculated for each defect level using Eq. (2) .

Generic image for table
Table II.

Transient SPS defect densities converted to bulk densities using W = 139 nm.

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/content/aip/journal/apl/103/7/10.1063/1.4818712
2013-08-13
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of polishing induced defects and hydrofluoric acid passivation effect in ZnO
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/7/10.1063/1.4818712
10.1063/1.4818712
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