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Resistive switching in rectifying interfaces of metal-semiconductor-metal structures
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10.1063/1.4818730
/content/aip/journal/apl/103/7/10.1063/1.4818730
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/7/10.1063/1.4818730
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of the experimental setup and (b) typical I–V curve of the Ti/Hf/Co devices. (c), (d) Schemas pointing out the radically different behavior observed in our devices (c) with respect to what is expected in standard bipolar RS devices (d). It implies a discontinuity in the resistance state when the polarity of the applied voltage changes.

Image of FIG. 2.
FIG. 2.

Hysteresis switching loops obtained with opposite sensing bias on the same device. (a) When the sensing bias is +4 V, it reveals the behavior of the Ti/HfO interface. (b) Instead, when the bias is −4 V, it evidences the behavior of the Co/HfO interface.

Image of FIG. 3.
FIG. 3.

(a) Schematic illustration of the structure of our devices. (b) Energy band diagram at thermal equilibrium of the system, where E and E are the Fermi energies of the metal contacts (C, C), W and W are the widths of the depletion layers, E is the energy band gap of the semiconductor, qψ is the built-in potential, E and E are the valence and conduction band, respectively, and qΦ and qΦ are the energy heights of the Schottky barriers. (c–e) Different possible configuration of the system; with high concentration of oxygen vacancies (spheres) at the left interface (c), right (d), and in both interfaces (e). For the sake of simplicity, in this plot, we represented the injection barriers alike and not changing after the introduction of the oxygen vacancies. Actually, in our model, we assume that the injection barriers are strongly modified by the oxygen vacancies, turning the metal-semiconductor interfaces into ohmic contacts. We also account for unlike junctions.

Image of FIG. 4.
FIG. 4.

Experimental and simulated I–V curves for the devices Co/HfO/Ti (a) and Au/HfO/Ti (e). (b–d) Evolution of the simulated parameters in time-steps, corresponding to the numerical integration presented in (a). For positive bias (voltage is presented in panel (b)), the HfO/Co interface do not limit the injection of carriers into the device, the current is governed by the Ti/HfO interface and the bulk; for negative bias it is limited by the HfO/Co interface and the bulk (see panel (c)). The sequence of the different states of the system is presented in panel (d) together with the voltage at the interfaces. This sequence, numbered (1) to (6) in accordance with panel (a), is: (1) the Ti/HfO interface is in HRS and the HfO/Co interface is in LRS, (2) SET of the Ti/HfO interface, (3) RESET of the HfO/Co interface, (4) state complementary to (1), (5) the SET of the HfO/Co interface, and finally (6) RESET of the Ti/HfO interface.

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/content/aip/journal/apl/103/7/10.1063/1.4818730
2013-08-15
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resistive switching in rectifying interfaces of metal-semiconductor-metal structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/7/10.1063/1.4818730
10.1063/1.4818730
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