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Effect of Sb induced type II alignment on dynamical processes in InAs/GaAs/GaAsSb quantum dots: Implication to solar cell design
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10.1063/1.4818762
/content/aip/journal/apl/103/7/10.1063/1.4818762
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/7/10.1063/1.4818762
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Evolution of , and 0 wave function delocalisation with the increasing of Sb content in the GaAsSb buffer layer. The QD dimension is  = 15 nm, , and .

Image of FIG. 2.
FIG. 2.

Interband radiative lifetime between 0 and 0 states as a function of transition energy between them and Sb concentration in buffer region. Solid lines and dashed lines .

Image of FIG. 3.
FIG. 3.

Intraband radiative lifetime between electron states 1 and 0 as a function of transition energy between them, QD size and Sb concentration in buffer region.

Image of FIG. 4.
FIG. 4.

Auger electron cooling time of an electron in 1 state relaxing to 0 as a function of transition energy between 0 and 0 ground states and Sb concentration in buffer region. Solid lines and dashed lines .

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/content/aip/journal/apl/103/7/10.1063/1.4818762
2013-08-15
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of Sb induced type II alignment on dynamical processes in InAs/GaAs/GaAsSb quantum dots: Implication to solar cell design
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/7/10.1063/1.4818762
10.1063/1.4818762
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