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Atomic-resolution HAADF (left) and BF (right) STEM images of the oxide-free bonding interface between InP and Si in the reference specimen.
Low-magnification BF-STEM image of the specimen indented with a maximum load of 10 mN. The impression made by the indenter is outlined on the image. Debonding can be observed far from the indented region. Inset shows an enlarged section of the image centered on the blister on the left-hand side of the indented region.
Atomic-resolution BF-STEM image of the interface between InP and Si below the apex of the indenter. The outlined (1 1 1) and planes of InP and Si reveal that the InP membrane macroscopically rotates during the indentation experiment. Insets show the Fourier transforms of the InP and Si layers.
Mapping of the rotation observed in Figure 3 , obtained using the GPA algorithm.
Profile along the white arrow in Figure 4 . The average rotation is 16°.
Schematic illustration of the mechanism responsible for the debonding.
Summary of findings.
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