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Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
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Image of FIG. 1.
FIG. 1.

A schematic process flow for epitaxial growth of AlN by ALE.

Image of FIG. 2.
FIG. 2.

(a) As synthesized GaN/a-sapphire AFM image, (b) AFM image of the GaN surface after and cleaning. (c) and (d) AFM image of ALE grown AlN on GaN/a-sapphire for the TMA pulse length of 0.03 and 0.06 s, respectively. The AlN nucleation is non-uniform for an unsaturated GaN surface with TMA molecules.

Image of FIG. 3.
FIG. 3.

(a) The Variation of GR with TMA pulse length (dose) for the purge time 10 s. The error bars are at ±1.5% level. Fig 3(b) shows the effect of precursors purge time on GR. Dependence of impurity concentrations on the purge time is inset of the Fig. 3(b) . 10 s purge resulted saturated growth with lowest carbon concentration.

Image of FIG. 4.
FIG. 4.

The GR dependence on T with error bars are at ±1.5% level is shown in Fig. 4(a) . For T = 200–400 °C, GR is almost constant. The variation of carbon and oxygen impurities and Al/N ratio with T is shown in Fig. 4(b) . Figure 4(c) shows the variation of imaginary part of dielectric constant with energy. Band edge related features are visible for T ≥ 500 °C.

Image of FIG. 5.
FIG. 5.

XRD peaks from the AlN/GaN/a-sapphire stack. Insets show the rocking curve of ALE grown AlN (0002) reflection. The rocking curve FWHM is 630 arc sec for growth conditions: T = 500 °C, 10 s purge, and TMA pulse length = 0.06 s. Imaginary part of the dielectric constant measured by spectroscopic ellipsometry is shown in Fig 5(b) . The band gap of 6.2 eV was measured for ALE AlN/Si(111).


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Table I.

Summary of studied growth parameters range and established values.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy