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Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process
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10.1063/1.4819162
/content/aip/journal/apl/103/8/10.1063/1.4819162
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/8/10.1063/1.4819162
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The current-voltage (I-V) curves are the resistive switching characteristics of Zn:SiO device with and without SCCO treatment. The inset is a schematic diagram of Zn:SiO device for electrical measurement and full sweep cycle.

Image of FIG. 2.
FIG. 2.

The I-V curves of Zn:SiO device measured at a low temperature range of 100 K to 298 K. The bottom right and left insets are the plot of ln(I) vs (1/T) in LRS of Zn:SiO device and Ohmic conduction current fitting, respectively.

Image of FIG. 3.
FIG. 3.

The I-V curves of SCCO-treated Zn:SiO device measured at a low temperature range of 100 K–298 K. The bottom right and left insets are the plot of ln(I) vs (1/T) in LRS of SCCO-treated Zn:SiO device and Hopping conduction current fitting, respectively.

Image of FIG. 4.
FIG. 4.

The Arrhenius plot of the LRS in SCCO-treated Zn:SiO device. The inset is the intensity comparison of Zn-O and Zn XPS spectra for SCCO-treated and untreated Zn:SiO devices.

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/content/aip/journal/apl/103/8/10.1063/1.4819162
2013-08-23
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/8/10.1063/1.4819162
10.1063/1.4819162
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