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Gallium nitride nanowires by maskless hot phosphoric wet etching
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View: Figures


Image of FIG. 1.
FIG. 1.

(a)–(c) SEM images of N-face GaN etched at 120 °C and 85% H3PO4 for various times: (a) 2 min etch, (b) 5 min etch, (c) 10 min etch. The 2 min etch shows nanowires with total height of about 400 nm, while the 5 min and 10 min etch times show a transition with decrease in the nanowire vertical height, increase in diameter, and decrease in nano-pyramid density.

Image of FIG. 2.
FIG. 2.

(a) Nanowire density and vertical height vs. time for etching at 120 °C and 85% H3PO4. (b) Nanowire diameter and vertical height vs. H3PO4 concentration at 80 °C and 5 min etch time.

Image of FIG. 3.
FIG. 3.

Plot of FWHMs of DCRCs of (hkil) planes as a function of the lattice plane inclination angle φ. Curves correspond to: ◆ unetched N-polar GaN and ◼ etched N-polar GaN at 120 °C, 85% HPO for 2 min.

Image of FIG. 4.
FIG. 4.

PL spectra of MQW grown on HPO etched GaN NWs and non-etched planar N-face GaN.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gallium nitride nanowires by maskless hot phosphoric wet etching