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Silicon nanowire network metal-semiconductor-metal photodetectors
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10.1063/1.4819387
/content/aip/journal/apl/103/8/10.1063/1.4819387
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/8/10.1063/1.4819387
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) A photograph of Si wafer with Si NW arrays, SEM image of vertically aligned Si NWs and Si NWs dispersed in water. (b) Photographs of the vacuum filtration setup, Si NW networks on filtration membrane and on glass.

Image of FIG. 2.
FIG. 2.

SEM images of Si NW networks with different densities of (a) 0.87, (b) 1.87, and (c) 3.44 NWs/m. (d) Transparency of Si NW networks with different densities. Transmittance of Ag NW network is also provided for comparison.

Image of FIG. 3.
FIG. 3.

(a) SEM image of the MSM structure. Inset shows that the channel was free from Ag NW prior to Si NWs transfer. (b) Representative device architecture and (c) photograph of the final device. Scale bar corresponds to 2.5 cm.

Image of FIG. 4.
FIG. 4.

(a) Photoresponsivity with different NW densities under a 10 V bias. (b) I-V characteristics of the device (1.87 NWs/m). (c) Light ON-OFF measurements with different NW densities under 5 V bias and (d) dynamic response behavior (1.87 NWs/m) under a 5 V bias.

Image of FIG. 5.
FIG. 5.

(a) Light ON-OFF measurements under 5 V bias showing device is operational upon bending. (b) I-V characteristics of the bent device. (c) Dark/light currents under a bias of 5 V showing stability of the devices in the investigated range. (d) Photograph of flexible device at a bending radius of 1 cm. A density of 1.87 NWs/m was used for flexible devices.

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/content/aip/journal/apl/103/8/10.1063/1.4819387
2013-08-23
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Silicon nanowire network metal-semiconductor-metal photodetectors
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/8/10.1063/1.4819387
10.1063/1.4819387
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