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(a) A photograph of Si wafer with Si NW arrays, SEM image of vertically aligned Si NWs and Si NWs dispersed in water. (b) Photographs of the vacuum filtration setup, Si NW networks on filtration membrane and on glass.
SEM images of Si NW networks with different densities of (a) 0.87, (b) 1.87, and (c) 3.44 NWs/μm2. (d) Transparency of Si NW networks with different densities. Transmittance of Ag NW network is also provided for comparison.
(a) SEM image of the MSM structure. Inset shows that the channel was free from Ag NW prior to Si NWs transfer. (b) Representative device architecture and (c) photograph of the final device. Scale bar corresponds to 2.5 cm.
(a) Photoresponsivity with different NW densities under a 10 V bias. (b) I-V characteristics of the device (1.87 NWs/μm2). (c) Light ON-OFF measurements with different NW densities under 5 V bias and (d) dynamic response behavior (1.87 NWs/μm2) under a 5 V bias.
(a) Light ON-OFF measurements under 5 V bias showing device is operational upon bending. (b) I-V characteristics of the bent device. (c) Dark/light currents under a bias of 5 V showing stability of the devices in the investigated range. (d) Photograph of flexible device at a bending radius of 1 cm. A density of 1.87 NWs/μm2 was used for flexible devices.
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