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The process of inkjet printed SWCNT TFT fabrication.
(a) Optical image of the SWCNT TFT array. (b) Low-magnification SEM image of a SWCNT TFT (L = 150 μm, W = 3000 μm). (c) SEM image of SWCNT distribution in the channel area (red square in (b)). (d) Optical absorbance spectra of the SWCNT ink.
(a) AFM image of the SWCNT network on untreated ZrO2. (b)AFM image of the SWCNT network on UV O3 treated ZrO2. (c) Transfer characteristics of untreated and UV O3 treated SWCNT TFTs.
(a) Output characteristics of the inkjet printed SWCNT TFT (L = 150 μm, W = 3000 μm). (b) Transfer characteristics of the inkjet printed SWCNT TFT (L = 150 μm, W = 3000 μm). Ion/Ioff is larger than 105 for this device.
(a) Channel length dependence of the intrinsic mobility of the inkjet printed SWCNT TFTs. (b) Channel length dependence of log (Ion/Ioff ) and Ion/W of the inkjet printed SWCNT TFTs. Vertical error bars represent standard deviation of each device parameter. 375 devices in total (100 TFTs for L of 20, 50, and 150 μm, 50 TFTs for L = 200 μm, 25 TFTs for L = 250 μm) were fabricated and analyzed.
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