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Reversible nanoscale switching of polytwin orientation in a ferroelectric thin film induced by a local electric field
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10.1063/1.4820137
/content/aip/journal/apl/103/9/10.1063/1.4820137
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/9/10.1063/1.4820137

Figures

Image of FIG. 1.
FIG. 1.

A small shift in the position of the Zr/Ti atoms relative to the centre of the tetragonal unit cell leads to a polarization vector .

Image of FIG. 2.
FIG. 2.

For PZT(110) there are polarization components parallel to the surface (blue) and two polarizations and at 45° to the surface.

Image of FIG. 3.
FIG. 3.

Top and side view of the 90° domain walls classified by their angle difference between different possible orientations.

Image of FIG. 4.
FIG. 4.

Type I and type II domain walls with relative angle of 109.5°. Type III domain wall at 54.75° relative to type I and type II domain walls.

Image of FIG. 5.
FIG. 5.

E-PFM images of a grain showing ferroelastic orientation switching in region I. The polytwins in region II do not show any change in orientation after poling several times. (a) Topography, magnitude, and phase (left to right). (b)–(f) Magnitude between (a) and (b), +10 V was applied to the tip, between (b) and (c), −10 V was applied, and thereafter the polarity was switched between each image; (g) phase of last poling cycle. The crystallographic orientation, deduced from the domain wall orientation of the polytwin, is shown in (a). The possible configurations after +10 V and −10 V poling are shown in (h), (i) (type I), and (j) (type II). (k)–(m) Illustrate the three switching scenarios discussed in the text, with (m) being the most likely.

Image of FIG. 6.
FIG. 6.

E-PFM images of a grain showing ferroelastic orientation switching. (a) Topography, magnitude, and phase (left to right); (b)–(f) magnitude between (a) and (b), +10 V was applied to the tip, between (b) and (c), −10 V was applied, and thereafter the polarity was switched between each image; (g) phase of last poling cycle; (h) corresponds to the −10 V poling state (type I); and (i) the +10 V poling state (type III).

Tables

Generic image for table
Table I.

Classification of ferroelastic domain walls by horizontal orientation within a single grain and relative angles.

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/content/aip/journal/apl/103/9/10.1063/1.4820137
2013-08-29
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reversible nanoscale switching of polytwin orientation in a ferroelectric thin film induced by a local electric field
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/9/10.1063/1.4820137
10.1063/1.4820137
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