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Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor
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10.1063/1.4858958
/content/aip/journal/apl/104/1/10.1063/1.4858958
http://aip.metastore.ingenta.com/content/aip/journal/apl/104/1/10.1063/1.4858958
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The undoped SET is embedded in a measurement set-up capable of simultaneous rf and dc measurements. The 2DEG is induced by applying a voltage to the TG, with current passed between the source (S) and drain (D). The SET is controlled by applying voltage to L, R, and PG gates via 10 kΩ rf-chokes (L was kept grounded due to strong coupling with the PG). Inset: A SEM image of the SET, the darker regions are where the top-gate has been etched away. The scale bar is 500 nm.

Image of FIG. 2.
FIG. 2.

4 K characterisation of the SET. (a) The measured dependence of rf reflectance on frequency () is shown for different top-gate voltages corresponding to electron densities () of , respectively. starts at −17 dB due to losses in the lines from the top of the rf dip-station to the sample stage at room temperature. The dashed black line is the result of a lumped-element circuit model 17 for  = 1.020 V. (b) The rf reflectometry circuit is at resonance (487 MHz). We plot as a function of the four-terminal resistance of the dot, where is varied by changing the plunger gate voltage . Measurements were performed for , where . 8

Image of FIG. 3.
FIG. 3.

Millikelvin measurements of the CB oscillations (left axis) in the two-terminal conductance (series resistance subtracted 19 ). The rf-reflectance (right axis) traces out the CB oscillations when the transfer function is sensitive to the dot. We apply −50 dBm at 447 MHz to the source. Losses in the lines, from the top of the dilution fridge to the sample stage at room temperature, are −37 dB marking the upper limit of . The inset shows the spectrum of the reflected power for a small (0.09 .) 890 Hz sine wave on the top plunger-gate.

Image of FIG. 4.
FIG. 4.

Rapid gated measurements of CB oscillations. The SET is biased to sit on the side of a CB peak and a 15 mV triangle-wave is applied at 110 Hz to the top plunger-gate. (a) monitors the changing occupation number of the SET as indicated by the smaller peaks, and (b) shows the triangle wave applied to the top plunger-gate.

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/content/aip/journal/apl/104/1/10.1063/1.4858958
2014-01-10
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/104/1/10.1063/1.4858958
10.1063/1.4858958
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