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Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation
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10.1063/1.4869221
/content/aip/journal/apl/104/11/10.1063/1.4869221
http://aip.metastore.ingenta.com/content/aip/journal/apl/104/11/10.1063/1.4869221
/content/aip/journal/apl/104/11/10.1063/1.4869221
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/content/aip/journal/apl/104/11/10.1063/1.4869221
2014-03-20
2014-11-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation
http://aip.metastore.ingenta.com/content/aip/journal/apl/104/11/10.1063/1.4869221
10.1063/1.4869221
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