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Experimental verification of effects of barrier dopings on the internal electric fields and the band structure in InGaN/GaN light emitting diodes
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10.1063/1.4870256
/content/aip/journal/apl/104/12/10.1063/1.4870256
http://aip.metastore.ingenta.com/content/aip/journal/apl/104/12/10.1063/1.4870256
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/content/aip/journal/apl/104/12/10.1063/1.4870256
2014-03-28
2014-08-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Experimental verification of effects of barrier dopings on the internal electric fields and the band structure in InGaN/GaN light emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/104/12/10.1063/1.4870256
10.1063/1.4870256
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