- photonics and optoelectronics
- surfaces and interfaces
- structural, mechanical, optical, and thermodynamic properties of advanced materials
- magnetics and spintronics
- superconductivity and superconducting electronics
- dielectrics, ferroelectrics, and multiferroics
- nanoscale science and technology
- organic electronics and photonics
- device physics
- biophysics and bio-inspired systems
- energy conversion and storage
- interdisciplinary and general physics
Index of content:
Volume 104, Issue 2, 13 January 2014
In this letter, we report the observation of ballistic transport on micron length scales in graphene synthesised by chemical vapour deposition (CVD). Transport measurements were done on Hall bar geometries in a liquid He cryostat. Using non-local measurements, we show that electrons can be ballistically directed by a magnetic field (transverse magnetic focussing) over length scales of ∼1 μm. Comparison with atomic force microscope measurements suggests a correlation between the absence of wrinkles and the presence of ballistic transport in CVD graphene.
- PHOTONICS AND OPTOELECTRONICS
104(2014); http://dx.doi.org/10.1063/1.4855515View Description Hide Description
We report room temperature operation of telecom wavelength single-photon detectors for high bit rate quantum key distribution (QKD). Room temperature operation is achieved using InGaAs avalanche photodiodes integrated with electronics based on the self-differencing technique that increases avalanche discrimination sensitivity. Despite using room temperature detectors, we demonstrate QKD with record secure bit rates over a range of fiber lengths (e.g., 1.26 Mbit/s over 50 km). Furthermore, our results indicate that operating the detectors at room temperature increases the secure bit rate for short distances.
104(2014); http://dx.doi.org/10.1063/1.4861708View Description Hide Description
We study mode stability in photonic-crystal surface-emitting lasers (PCSELs) with large coupling-coefficient-length product . We observe that mode competition occurs at high current levels above threshold. Our combined experimental and theoretical study provides the first evidence of the mode competition originating from the high-order band-edge modes. The decreased threshold margin between these competing high-order modes and the main lasing mode with increasing cavity length as well as the spatial hole burning effect may deteriorate the single-mode stability. Our finding is essential for designing single-mode high-power PCSELs for which the strategy to suppress the high-order modes must be considered.
Resonant and nonresonant funneling through plasmonic gratings in the limit of the aperture width approaching zero104(2014); http://dx.doi.org/10.1063/1.4861850View Description Hide Description
We experimentally and theoretically investigate electromagnetic funneling in thick plasmonic gratings as the aperture size approaches zero. Both resonant and nonresonant funneling mechanisms were observed to provide near unity transmission for aperture widths of ∼λ/100. As the apertures become smaller, the resonant funneling process enters into a region of strong absorption followed by complete reflection. In sharp contrast, the broadband, nonresonant funneling mechanism continues to transmit energy at high levels for screens of <1% open area and apertures sizes as small as λ/1500 before finally transitioning to a completely absorbing state without any abatement of the funneling into the apertures.
104(2014); http://dx.doi.org/10.1063/1.4858969View Description Hide Description
We demonstrate experimentally Fano resonances in all-dielectric oligomers clusters of dielectric particles. We study two structures consisting of a ring of six ceramic spheres with and without a central particle and demonstrate that both structures exhibit resonant suppression of the forward scattering associated with the Fano resonance originated from the excitation of magnetic dipole modes. By employing the near-field measurement techniques, we establish the relation between near- and far-field properties of the Fano resonances and identify directly their origin. We support our findings by an analytical approach based on the discrete-dipole approximation and find an excellent agreement with the experimental data.
Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures104(2014); http://dx.doi.org/10.1063/1.4862064View Description Hide Description
Efficient semiconductor optical emitters in the deep-ultraviolet spectral window are encountering some of the most deep rooted problems of semiconductor physics. In III-Nitride heterostructures, obtaining short-wavelength photon emission requires the use of wide bandgap high Al composition AlGaN active regions. High conductivity electron (n-) and hole (p-) injection layers of even higher bandgaps are necessary for electrical carrier injection. This approach requires the activation of very deep dopants in very wide bandgap semiconductors, which is a difficult task. In this work, an approach is proposed and experimentally demonstrated to counter the challenges. The active region of the heterostructure light emitting diode uses ultrasmall epitaxially grown GaN quantum dots. Remarkably, the optical emission energy from GaN is pushed from 365 nm (3.4 eV, the bulk bandgap) to below 240 nm (>5.2 eV) because of extreme quantum confinement in the dots. This is possible because of the peculiar bandstructure and band alignments in the GaN/AlN system. This active region design crucially enables two further innovations for efficient carrier injection: Tunnel injection of carriers and polarization-induced p-type doping. The combination of these three advances results in major boosts in electroluminescence in deep-ultraviolet light emitting diodes and lays the groundwork for electrically pumped short-wavelength lasers.
Long-infrared InAs-based quantum cascade lasers operating at 291 K (λ=19 μm) with metal-metal resonators104(2014); http://dx.doi.org/10.1063/1.4861465View Description Hide Description
We demonstrate quantum cascade lasers in the InAs/AlSb material system emitting at wavelengths of λ = 19 μm and λ = 21 μm. The maximum operating temperatures are 291 K and 250 K, and the threshold current densities at 78 K are as low as 0.6 kA/cm2 and 1.3 kA/cm2 for the lasers emitting at λ = 19 μm and λ = 21 μm, respectively. These values represent the best performance to date for quantum cascade lasers operating above λ = 16 μm. Although the devices employ metal-metal waveguide geometries, the diffraction effects which typically hinder the output beam of THz devices are not observed.
Single-shot high aspect ratio bulk nanostructuring of fused silica using chirp-controlled ultrafast laser Bessel beams104(2014); http://dx.doi.org/10.1063/1.4861899View Description Hide Description
We report single-shot, high aspect ratio nanovoid fabrication in bulk fused silica using zeroth order chirp-controlled ultrafast laser Bessel beams. We identify a unique laser pulse length and energy dependence of the physical characteristics of machined structures over which nanovoids of diameter in the range 200–400 nm and aspect ratios exceeding 1000 can be fabricated. A mechanism based on the axial energy deposition of nonlinear ultrashort Bessel beams and subsequent material densification or rarefaction in fused silica is proposed, intricating the non-diffractive nature with the diffusing character of laser-generated free carriers. Fluid flow through nanochannel is also demonstrated.
Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures104(2014); http://dx.doi.org/10.1063/1.4862176View Description Hide Description
In this work, we report on the time-resolved photoluminescence studies of a double quantum well In0.2Ga0.8As/GaAs0.8Sb0.2/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2 K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.
Responsivity enhancement of mid-infrared PbSe detectors using CaF2 nano-structured antireflective coatings104(2014); http://dx.doi.org/10.1063/1.4861186View Description Hide Description
The CaF2 nano-structures grown by thermal vapor deposition are presented. Significant responsivity improvement (>200%) of mid-infrared PbSe detectors incorporating a 200 nm nano-structured CaF2 coating was observed. The detector provides a detectivity of 4.2 × 1010 cm · Hz1/2/W at 3.8 μm, which outperforms all the reported un-cooled PbSe detectors. Structural investigations show that the coating is constructed by tapered-shape nanostructures, which creates a gradient refractive-index profile. Analogy to moth-eye antireflective mechanism, the gradient refractive-index nanostructures play the major roles for this antireflection effect. Some other possible mechanisms that help enhance the device performance are also discussed in the work.
Nonlinear optical propagation in a tandem structure comprising nonlinear absorption and scattering materials104(2014); http://dx.doi.org/10.1063/1.4862259View Description Hide Description
Laser propagation in a tandem structure comprising carbon nanotubes and phthalocyanines is studied by Z-scan method. Due to the different mechanisms of the two materials, the laser beam can be attenuated with different absorptivities, by changing the sequence of light passing through each material. Numerical simulations considering the effect of path length and the change of nonlinear coefficient within each material are conducted for understanding the distribution of laser intensity in the tandem system and hence, fitting of the asymmetric Z-scan curves. The results are helpful for the design of nonlinear optical devices comprising multiple nonlinear materials and mechanisms.
104(2014); http://dx.doi.org/10.1063/1.4862430View Description Hide Description
We present theoretical analysis and numerical studies of cavity modes in circular plasmonic patch nanoantennas. There exist both even and odd cavity modes, while the even cavity modes were often missed in the literature because they can only be excited by oblique illumination. The cavity resonance frequencies are affected by near-field coupling at small periods and by coupling with surface plasmon outside the cavity at large periods. For intermediate periods with non-coupling effects, a simple resonant condition is obtained and validated by numerical simulations to relate the gap plasmon wave number and the effective patch size.
104(2014); http://dx.doi.org/10.1063/1.4861604View Description Hide Description
Competing approaches exist, which allow control of phase noise and frequency tuning in mode-locked lasers, but no judgement of pros and cons based on a comparative analysis was presented yet. Here, we compare results of hybrid mode-locking, hybrid mode-locking with optical injection seeding, and sideband optical injection seeding performed on the same quantum dot laser under identical bias conditions. We achieved the lowest integrated jitter of 121 fs and a record large radio-frequency (RF) tuning range of 342 MHz with sideband injection seeding of the passively mode-locked laser. The combination of hybrid mode-locking together with optical injection-locking resulted in 240 fs integrated jitter and a RF tuning range of 167 MHz. Using conventional hybrid mode-locking, the integrated jitter and the RF tuning range were 620 fs and 10 MHz, respectively.
Creating large second-order optical nonlinearity in optical waveguides written by femtosecond laser pulses in boro-aluminosilicate glass104(2014); http://dx.doi.org/10.1063/1.4861903View Description Hide Description
The thermal poling technique was applied to optical waveguides embedded in a commercial boro-aluminosilicate glass, resulting in high levels of induced second-order optical nonlinearity. The waveguides were fabricated using the femtosecond laser direct-write technique, and thermally poled samples were characterized with second harmonic optical microscopy to reveal the distribution profile of the induced nonlinearity. It was found that, in contrast to fused silica, the presence of waveguides in boro-aluminosilicate glass led to an enhancement of the creation of the second-order nonlinearity, which is larger in the laser written waveguiding regions when compared to the un-modified substrate. The magnitude of the nonlinear coefficient d 33 achieved in the core of the laser-written waveguides, up to 0.2 pm/V, was comparable to that in thermally poled fused silica, enabling the realization of compact integrated electro-optic devices in boro-aluminosilicate glasses.
104(2014); http://dx.doi.org/10.1063/1.4861934View Description Hide Description
We study infrared backward cooperative emission in a rubidium vapor induced by ultrafast two-photon optical excitations. The laser coherent control of the backward emission is demonstrated by using a pair of 100 fs pulses with a variable time delay. The temporal variation (quantum beat) of the backward beam intensity due to interference of atomic transitions in the rubidium atomic level system 5S-5P-5D is produced and controlled. Based on the obtained experimental results, we discuss possible applications of the developed approach for creation of an effective “guide star” in the sodium atomic layer in the upper atmosphere (mesosphere).
Two dimensional metallic photonic crystals for light trapping and anti-reflective coatings in thermophotovoltaic applications104(2014); http://dx.doi.org/10.1063/1.4862180View Description Hide Description
We report the development of a front-side contact design for thermophotovoltaics that utilizes metallic photonic crystals (PhCs). While this front-side grid replacement covers more surface area of the semiconductor, a higher percentage of photons is shown to be converted to usable power in the photodiode. This leads to a 30% increase in the short-circuit current of the gallium antimonide thermophotovoltaic cell.
104(2014); http://dx.doi.org/10.1063/1.4860983View Description Hide Description
A miniaturized ultrasound sensor is demonstrated in a silicon-on-insulator platform. The sensor is based on a π-phase-shifted Bragg grating formed by waveguide corrugation. Ultrasound detection is performed by monitoring shifts in the resonance frequency of the grating using pulse interferometry. The device is characterized by measuring its response to a wideband acoustic point source generated using the optoacoustic effect. Experimental results show that the sensor's response is dominated by the formation of surface acoustic waves.
104(2014); http://dx.doi.org/10.1063/1.4861166View Description Hide Description
We measure strong magnetic field intensities in a subwavelength gap separating two dielectric resonators. This dimer magnetic antenna is characterized in the GHz spectral regime when considering three conditions of illumination. We detail the different magneto-electric couplings involved in the enhancement of the near magnetic field and derive the analytical expressions of the magnetic field intensities. The results reported here in the GHz domain can be extended to other spectral domains, since they are obtained with a dielectric permittivity of 16 that can be observed in a very broad spectrum ranging from optics to radio-frequencies.
Dispersion retrieval from multi-level ultra-deep reactive-ion-etched microstructures for terahertz slow-wave circuits104(2014); http://dx.doi.org/10.1063/1.4862324View Description Hide Description
A multi-level microstructure is proposed for terahertz slow-wave circuits, with dispersion relation retrieved by scattering parameter measurements. The measured return loss shows strong resonances above the cutoff with negligible phase shifts compared with finite element analysis. Splitting the circuit into multi levels enables a low aspect ratio configuration that alleviates the loading effect of deep-reactive-ion etching on silicon wafers. This makes it easier to achieve flat-etched bottom and smooth sidewall profiles. The dispersion retrieved from the measurement, therefore, corresponds well to the theoretical estimation. The result provides a straightforward way to the precise determination of dispersions in terahertz vacuum electronics.
104(2014); http://dx.doi.org/10.1063/1.4862189View Description Hide Description
We propose a unique approach for light extraction, using engineered nano-particles to efficiently decouple the light guided in transverse-magnetic guided modes into free-space radiation modes that leak out normally to the thin-film stacks. The underlying mechanism takes advantage of a small electric field variation at the nano-particle scale and induces a “polarization conversion,” which renders the induced dipole moment perpendicular to the polarization of the incident light. Our analysis is supported by 2D fully vectorial computational results. Potential applications for light emitting or photovoltaic devices are outlined.
Insight into the photoelectron angular dependent energy distribution of negative-electron-affinity InP photocathodes104(2014); http://dx.doi.org/10.1063/1.4862645View Description Hide Description
Energy distribution and angular distribution of the photoelectrons from InP photocathodes are investigated using a precise Monte Carlo model. It is found that Γ-valley electrons contribute to the first peak of the energy distribution curve, but the second peak is contributed by both Γ-valley and L-valley electrons rather than only L-valley electrons. L valley electrons are shown to have a smaller angular spread than Γ-valley electrons, which is attributed to the much higher potential energy of L-valley minimum. The further simulation indicates that the performance of InP photocathodes can be improved by increasing the hole concentration or decreasing the temperature, but the activation layer thickness variation only has very slight influence on either energy or angular distribution.