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Lifting the off-state bandgap limit in InAs channel metal-oxide-semiconductor heterostructures of nanometer dimensions
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10.1063/1.4880719
/content/aip/journal/apl/104/22/10.1063/1.4880719
http://aip.metastore.ingenta.com/content/aip/journal/apl/104/22/10.1063/1.4880719
/content/aip/journal/apl/104/22/10.1063/1.4880719
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/content/aip/journal/apl/104/22/10.1063/1.4880719
2014-06-02
2014-12-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lifting the off-state bandgap limit in InAs channel metal-oxide-semiconductor heterostructures of nanometer dimensions
http://aip.metastore.ingenta.com/content/aip/journal/apl/104/22/10.1063/1.4880719
10.1063/1.4880719
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