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I-V characteristics of the WORM device before and after the application of voltage pulses. The inset shows the schematic diagram of the Al/IGZO/Al WORM device structure.
Schematic illustrations of the changes in oxygen vacancies in the IGZO layer as a result of O2 plasmas treatment or the application of a writing voltage.
Device currents measured at 2 V as a function of either (a) the pulse voltage with the pulse duration fixed at 1 μs or (b) the pulse duration with the pulse voltage fixed at 7 V.
(a) Retention characteristic of the OFF and ON states; and (b) reading endurance of the OFF and ON states. The current is measured at 2 V.
Threshold voltage and corresponding electric field for writing for the pulse duration of 1 ms as a function of the IGZO film thickness. For each thickness, ten devices at different locations on a die were measured.
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