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High performance continuous wave 1.3 μ
m quantum dot lasers on silicon
4. M. Heck, J. Bauters, M. Davenport, J. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. Bowers, IEEE J. Sel. Topics Quantum Electron. 19, 6100117 (2013).
13. H.-H. Chang, A. W. Fang, M. N. Sysak, H. Park, R. Jones, O. Cohen, O. Raday, M. J. Paniccia, and J. E. Bowers, Opt. Express 15, 11466 (2007).
16. R. Alexander, D. T. D. Childs, H. Agarwal, K. Groom, H.-Y. Liu, M. Hopkinson, R. Hogg, M. Ishida, T. Yamamoto, M. Sugawara, Y. Arakawa, T. Badcock, R. Royce, and D. Mowbray, IEEE J. Quantum Electron. 43, 1129 (2007).
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We demonstrate record performance 1.3 μm InAs quantum dot lasers grown on silicon by molecular beam epitaxy. Ridge waveguide lasers fabricated from the as-grown material achieve room temperature continuous wave thresholds as low as 16 mA, output powers exceeding 176 mW, and lasing up to 119 °C. P-modulation doping of the active region improves T0 to the range of 100–200 K while maintaining low thresholds and high output powers. Device yield is presented showing repeatable performance across different dies and wafers.
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