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The impact of oxygen annealing on the switching time of ferroelectric thin film capacitor structures Pt/BaSrTiO/Pt was investigated. The response of their capacitance on pulsed control voltages before and after annealing was experimentally measured. It was demonstrated that the annealing results in suppression of the capacitance slow relaxation processes and increase of the threshold control voltages. These structures can therefore be attractive for fabrication of fast acting microwave devices.


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