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1.
1. N. K. Pervez, P. J. Hansen, and R. A. York, Appl. Phys. Lett. 85, 4451 (2004).
http://dx.doi.org/10.1063/1.1818724
2.
2. N. Setter, D. Damjanovich, L. Eng, G. Fox, S. Gevorgian, S. Hong, A. Kingon, H. Kohlsted, N. Y. Park, G. B. Stephenson, I. Stolitchnov, A. K. Taganstev, D. V. Taylor, T. Yamada, and S. Streiffer, J. Appl. Phys. 100, 051606 (2006).
http://dx.doi.org/10.1063/1.2336999
3.
3. O. Yu. Buslov, A. A. Golovkov, V. N. Keis, A. B. Kozyrev, S. V. Krasilnikov, T. B. Samoilova, A. Yu. Shimko, D. Ginley, and T. Kaydanova, IEEE Trans. Microwave Theory Tech. 55, 2951 (2007).
http://dx.doi.org/10.1109/TMTT.2007.909151
4.
4. S. Sheng and C. K. Ong, J. Appl. Phys. 111, 044506 (2012).
http://dx.doi.org/10.1063/1.3686615
5.
5. N. McN. Alford, P. K. Petrov, A. G. Gagarin, A. B. Kozyrev, A. I. Sokolov, O. I. Soldatenkov, and V. A. Volpyas, Appl. Phys. Lett. 87, 222904 (2005).
http://dx.doi.org/10.1063/1.2137466
6.
6. A. B. Kozyrev, V. N. Osadchy, D. M. Kosmin, A. V. Tumarkin, T. Kaydanova, and D. Ginley, Appl. Phys. Lett. 91, 022905 (2007).
http://dx.doi.org/10.1063/1.2756126
7.
7. Y. A. Boikov, B. M. Goltsman, V. K. Yarmarkin, and V. V. Lemanov, Appl. Phys. Lett. 78, 3866 (2001).
http://dx.doi.org/10.1063/1.1379062
8.
8. A. B. Kozyrev, M. M. Gaydukov, A. G. Gagarin, A. G. Altynnikov, S. V. Razumov, and A. V. Tumarkin, Tech. Phys. Lett. 35, 585 (2009).
http://dx.doi.org/10.1134/S1063785009070013
9.
9. A. V. Tumarkin, S. V. Razumov, A. G. Gagarin, M. M. Gaydukov, and A. B. Kozyrev, in Proceedings of the 37th European Microwave Conference (Horizon House Publications Ltd., London, 2007), p.1275.
10.
10. W. J. Merz, Phys. Rev. 95, 690 (1954).
http://dx.doi.org/10.1103/PhysRev.95.690
11.
11. A. K. Tagantsev, L. E. Cross, and J. Fousek, Domains in Ferroic Crystals and Thin Films (Springer, New York, 2010).
12.
12. H. Kleim and M. Kuehn, J. Appl. Phys. 110, 114106 (2011).
http://dx.doi.org/10.1063/1.3660680
13.
13. A. Kozyrev, M. Gaydukov, A. Gagarin, A. Altynnikov, V. Osadchy, A. Tumarkin, P. K. Petrov, and N. M. Alford, J. Appl. Phys. 106, 014108 (2009).
http://dx.doi.org/10.1063/1.3152797
14.
14. A. I. Dedyk and L. T. Ter-Martirosyan, Phys. Solid State 40, 220 (1998).
http://dx.doi.org/10.1134/1.1130277
15.
15. Y. L. Qin, C. L. Jia, and K. Urban, Appl. Phys. Lett. 80, 27282790 (2002).
http://dx.doi.org/10.1063/1.1469683
16.
16. H. Yang, Y. Q. Wang, H. Wang, and Q. X. Jia, Appl. Phys. Lett. 96, 012909 (2010).
http://dx.doi.org/10.1063/1.3291044
17.
17. M. T. Escote, F. M. Pontes, E. R. Leite, E. Longo, R. F. Jardim, and P. S. Pizani, J. Appl. Phys. 96, 2186 (2004).
http://dx.doi.org/10.1063/1.1767968
18.
18. N. Zhong, S. Okamura, K. Uchiyama, and T. Shiosaki, Appl. Phys. Lett. 87, 252901 (2005).
http://dx.doi.org/10.1063/1.2147710
19.
19. K.-H. Cho, C.-H. Lee, C.-Y. Kang, S.-J. Yoon, and Y.-P. Lee, Appl. Phys. Lett. 90, 162905 (2007).
http://dx.doi.org/10.1063/1.2727560
20.
20. L. A. Knauss, J. M. Pond, J. S. Horwitz, D. B. Chrisey, C. H. Mueller et, and R. Treece, Appl. Phys. Lett. 69, 25 (1996).
http://dx.doi.org/10.1063/1.118106
21.
21. S. Li, C. Ghinea, T. J. M. Bayer, M. Motzro, R. Schafranek, and A. Klein, J. Phys.: Condens. Matter 23, 334202 (2011).
http://dx.doi.org/10.1088/0953-8984/23/33/334202
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/content/aip/journal/apl/104/4/10.1063/1.4863436
2014-01-28
2016-09-28

Abstract

The impact of oxygen annealing on the switching time of ferroelectric thin film capacitor structures Pt/BaSrTiO/Pt was investigated. The response of their capacitance on pulsed control voltages before and after annealing was experimentally measured. It was demonstrated that the annealing results in suppression of the capacitance slow relaxation processes and increase of the threshold control voltages. These structures can therefore be attractive for fabrication of fast acting microwave devices.

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/deliver/fulltext/aip/journal/apl/104/4/1.4863436.html;jsessionid=OPSF76Rxvh93TqtYNMC_cl4Q.x-aip-live-03?itemId=/content/aip/journal/apl/104/4/10.1063/1.4863436&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/apl
true
true

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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=apl.aip.org/104/4/10.1063/1.4863436&pageURL=http://scitation.aip.org/content/aip/journal/apl/104/4/10.1063/1.4863436'
x100,x101,x102,x103,
Position1,Position2,Position3,
Right1,Right2,Right3,